Abstract

We report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10–528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as $\sim 69\mathrm{pm}$ and a side mode suppression ratio as high as $\sim 28\mathrm{dB}$, with a maximum optical power of $\sim 16.7\mathrm{mW}$. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of $\le 100\mathrm{pm}$, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.

© 2018 Optical Society of America

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