Mode-evolution-based coupler for high saturation power Ge-on-Si photodetectors

Abstract

We propose a mode-evolution-based coupler for high saturation power germanium-on-silicon photodetectors. This coupler uniformly illuminates the intrinsic germanium region of the detector, decreasing saturation effects, such as carrier screening, observed at high input powers. We demonstrate 70% more photocurrent generation (9.1–15.5 mA) and more than 40 times higher opto-electrical bandwidth (0.7–31 GHz) than conventional butt-coupled detectors under high-power illumination. The high-power and high-speed performance of the device, combined with the compactness of the coupling method, will enable new applications for integrated silicon photonics systems.

© 2017 Optical Society of America

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