Abstract

We propose a mode-evolution-based coupler for high saturation power germanium-on-silicon photodetectors. This coupler uniformly illuminates the intrinsic germanium region of the detector, decreasing saturation effects, such as carrier screening, observed at high input powers. We demonstrate 70% more photocurrent generation (9.1–15.5 mA) and more than 40 times higher opto-electrical bandwidth (0.7–31 GHz) than conventional butt-coupled detectors under high-power illumination. The high-power and high-speed performance of the device, combined with the compactness of the coupling method, will enable new applications for integrated silicon photonics systems.

© 2017 Optical Society of America

High-performance Ge-on-Si photodetector with optimized DBR location

Jishi Cui and Zhiping Zhou
Opt. Lett. 42(24) 5141-5144 (2017)

Integrated high-power germanium photodetectors assisted by light field manipulation

Yan Zuo, Yu Yu, Yu Zhang, De Zhou, and Xinliang Zhang
Opt. Lett. 44(13) 3338-3341 (2019)

Whispering gallery germanium-on-silicon photodetector

Zhan Su, Ehsan Shah Hosseini, Erman Timurdogan, Jie Sun, Michele Moresco, Gerald Leake, Thomas N. Adam, Douglas D. Coolbaugh, and Michael R. Watts
Opt. Lett. 42(15) 2878-2881 (2017)

High-power back-to-back dual-absorption germanium photodetector

Xiuli Li, Linzhi Peng, Zhi Liu, Xiangquan Liu, Jun Zheng, Yuhua Zuo, Chunlai Xue, and Buwen Cheng
Opt. Lett. 45(6) 1358-1361 (2020)

High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode

Zhilei Fu, Hui Yu, Qiang Zhang, Xiaofei Wang, Penghui Xia, and Jianyi Yang
Opt. Lett. 44(22) 5582-5585 (2019)