GaInP on oxide nonlinear photonic crystal technology

Aude Martin; Dorian Sanchez; Sylvain Combrié; Alfredo de Rossi; Fabrice Raineri

doi:10.1364/OL.42.000599

Optics Letters
Vol. 42,
Issue 3,
pp. 599-602
(2017)
•https://doi.org/10.1364/OL.42.000599

GaInP on oxide nonlinear photonic crystal technology

Aude Martin, Dorian Sanchez, Sylvain Combrié, Alfredo de Rossi, and Fabrice Raineri

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Aude Martin, Dorian Sanchez, Sylvain Combrié, Alfredo de Rossi, and Fabrice Raineri, "GaInP on oxide nonlinear photonic crystal technology," Opt. Lett. 42, 599-602 (2017)

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Abstract

Heat dissipation is improved in nonlinear III-V photonic crystal waveguides owing to the hybrid III-V/Silicon integration platform, allowing efficient four-wave mixing in the continuous-wave regime. A conversion efficiency of $- 17.6 dB$ is demonstrated with a pump power level below 100 mW in a dispersion-engineered waveguide with a flat group index of 28 over a 10 nm bandwidth.

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Parameters	[15]	Here	[25]	[18]
Material	Silicon	GaInP	AlGaAs	GaInP
	PhCWG	PhCWG	Wire	Wire
$α_{lin}$ (dB/cm)	65	$\approx 70$	1.5	12
$L$ (mm)	0.4	0.3	9	2
$P_{Pump} (in)$ (mW)	90	100	155	38
$η$ (dB)	−24 ^a	−17.6	−8.5 ^a	−31 ^a

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Optics Letters