Abstract

A bias-selectable, high operating temperature, three-color short-, extended-short-, and mid-wavelength infrared photodetector based on InAs/GaSb/AlSb type-II superlattices on GaSb substrate has been demonstrated. The short-, extended-short-, and mid-wavelength channels’ 50% cutoff wavelengths were 2.3, 2.9, and 4.4 μm, respectively, at 150 K. The mid-wavelength channel exhibited a saturated quantum efficiency of 34% at 4 μm under +200mV bias voltage in a front-side illumination configuration and without any antireflection coating. At 200 mV, the device exhibited a dark current density of 8.7×105A/cm2 providing a specific detectivity of 2×1011cm·Hz1/2/W at 150 K. The short-wavelength channel achieved a saturated quantum efficiency of 20% at 1.8 μm. At 10mV, the device’s dark current density was 5.5×108A/cm2. At zero bias, its specific detectivity was 1×1011cm·Hz1/2/W at 150 K. The extended short-wavelength channel achieved a saturated quantum efficiency of 22% at 2.75 μm. Under 2V bias voltage, the device exhibited a dark current density of 1.8×106A/cm2 providing a specific detectivity of 6.3×1011cm·Hz1/2/W at 150 K.

© 2017 Optical Society of America

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