Abstract
Polycrystalline 2D layered molybdenum disulfide () films were synthesized via a thermal decomposition method. The heterostructures were constructed in situ by synthesis on plane Si substrates. Such heterostructures exhibited high sensitivity to light illumination with wavelengths ranging from the deep ultraviolet to the near infrared. Photoresponse analysis reveals that a high responsivity of 23.1 A/W, a specific detectivity of Jones, and a fast response speed of 21.6/65.5 μs were achieved. Notably, the heterojunction photodetector could operate with excellent stability and repeatability over a wide frequency range up to 150 kHz. The high performance could be attributed to the high-quality heterojunction between and Si obtained by the in situ fabrication process. Such high performance with broadband response suggests that heterostructures could have great potential in optoelectronic applications.
© 2017 Optical Society of America
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