1.54&#x2009;&#x2009;&#x03BC;m photoluminescence from Er:O<sub>x</sub> centers at extremely low concentration in silicon at 300&#x00A0;K

Michele Celebrano; Lavinia Ghirardini; Marco Finazzi; Yasuo Shimizu; Yuan Tu; Koji Inoue; Yasuyoshi Nagai; Takahiro Shinada; Yuki Chiba; Ayman Abdelghafar; Maasa Yano; Takashi Tanii; Enrico Prati

doi:10.1364/OL.42.003311

Optics Letters
Vol. 42,
Issue 17,
pp. 3311-3314
(2017)
•https://doi.org/10.1364/OL.42.003311

1.54 μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K

Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii, and Enrico Prati

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Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii, and Enrico Prati, "1.54 μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K," Opt. Lett. 42, 3311-3314 (2017)

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Abstract

The demand for single photon emitters at $λ = 1.54 μm$ , which follows from the consistent development of quantum networks based on optical fiber technologies, makes ${Er : O}_{x}$ centers in Si a viable resource, thanks to the ${}^{4}{I_{13 / 2}} \to {{}^{4}I}_{15 / 2}$ optical transition of ${Er}^{3 +}$ . While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of ${Er : O}_{x}$ in Si. The lower-bound number of optically active Er atoms detected is of the order of $10^{2}$ , corresponding to a higher-bound value for the emission rate per individual ion of about $10^{4} s^{- 1}$ .

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