Optically pumped lasing with a Q-factor exceeding 6000 from wet-etched GaN micro-pyramids

Author Affiliations

L. C. Wang,^1,2,7,* Y. Y. Zhang,⁶ R. Chen,⁴ Z. Q. Liu,^2,3 J. Ma,² Z. Li,² X. Y. Yi,^2,3,8 H. J. Li,⁵ J. X. Wang,^2,3 G. H. Wang,^2,3 W. H. Zhu,^1,9 and J. M. Li^2,3

¹College of Mechanical and Electrical Engineering, State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha Hunan 410083, China

²Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

³College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China

⁴Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong, 518055, China

⁵Department of Materials Science and Engineering, University of California, Santa Barbara, Santa Barbara, California 93106, USA

⁶Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA

⁷Mind Star (Beijing) Technology Co., Ltd., Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872, China

⁸e-mail: spring@semi.ac.cn

⁹e-mail: zhuwenhui@csu.edu.cn

^*Corresponding author: wanglc@semi.ac.cn