Abstract

Bismuth (Bi)-doped phosphosilicate fibers have been fabricated by the modified chemical vapor deposition (MCVD)-solution doping technique under different process conditions. The influence of fabrication conditions on unsaturable loss in fibers has been investigated. Pump wavelength dependent Bi gain has been studied to obtain a flat gain over a wide bandwidth. A diode pumped all-fiber Bi-doped amplifier with a flat gain of $25\pm 1\mathrm{dB}$ from 1320–1360 nm (40 nm) has been demonstrated for $-10\mathrm{dBm}$ of input signal power with a noise figure (NF) ranging from 4–6 dB. Moreover, a small signal gain of 29 dB and a NF of 4.5 dB at 1340 nm has been achieved for an input signal power of $-30\mathrm{dBm}$.

© 2016 Optical Society of America

40  dB gain all fiber bismuth-doped amplifier operating in the O-band

N. K. Thipparapu, Y. Wang, A. A. Umnikov, P. Barua, D. J. Richardson, and J. K. Sahu
Opt. Lett. 44(9) 2248-2251 (2019)

Study on the temperature dependent characteristics of O-band bismuth-doped fiber amplifier

Y. Wang, N. K. Thipparapu, S. Wang, P. Barua, D. J. Richardson, and J. K. Sahu
Opt. Lett. 44(23) 5650-5653 (2019)

1120  nm diode-pumped Bi-doped fiber amplifier

N. K. Thipparapu, S. Jain, A. A. Umnikov, P. Barua, and J. K. Sahu
Opt. Lett. 40(10) 2441-2444 (2015)

Bi-doped fiber amplifiers in the E + S band with a high gain per unit length

Siyi Wang, Ziwei Zhai, Arindam Halder, and Jayanta K. Sahu
Opt. Lett. 48(21) 5635-5638 (2023)

High bismuth-doped germanosilicate fiber for efficient E + S-band amplification

Shaokun Liu, Xiaoke Yin, Zhimu Gu, Le He, Wenzhen Li, Yang Chen, Yingbin Xing, Yingbo Chu, Nengli Dai, and Jinyan Li
Opt. Lett. 49(2) 314-317 (2024)