Abstract
We report a single-mode 1180 nm distributed Bragg reflector (DBR) laser diode with a high output power of 340 mW. For the fabrication, we employed novel nanoimprint lithography that ensures cost-effective, large-area, conformal patterning and does not require regrowth. The output characteristics exhibited outstanding temperature insensitivity with a power drop of only 30% for an increase of the mount temperature from 20°C to 80°C. The high temperature stability was achieved by using GaInNAs/GaAs quantum wells (QWs), which exhibit improved carrier confinement compared to standard InGaAs/GaAs QWs. The corresponding characteristic temperatures were and . Moreover, we used a large detuning between the peak wavelength of the material gain at room temperature and the lasing wavelength determined by the DBR. In addition to good temperature characteristics, GaInNAs/GaAs QWs exhibit relatively low lattice strain with direct impact on improving the lifetime of laser diodes at this challenging wavelength range. The single-mode laser emission could be tuned by changing the mount temperature (0.1 nm/°C) or the drive current (0.5 pm/mA). The laser showed no degradation in a room-temperature lifetime test at 900 mA drive current. These compact and efficient 1180 nm laser diodes are instrumental for the development of compact frequency-doubled yellow–orange lasers, which have important applications in medicine and spectroscopy.
© 2016 Optical Society of America
Full Article | PDF ArticleMore Like This
D. Bisping, S. Schneider, S. Höfling, S. Habermann, M. Fischer, J. Koeth, and A. Forchel
Opt. Express 15(23) 15187-15192 (2007)
Ville-Markus Korpijärvi, Tomi Leinonen, Janne Puustinen, Antti Härkönen, and Mircea D. Guina
Opt. Express 18(25) 25633-25641 (2010)
H. D. Sun, G. J. Valentine, R. Macaluso, S. Calvez, D. Burns, M. D. Dawson, T. Jouhti, and M. Pessa
Opt. Lett. 27(23) 2124-2126 (2002)