Abstract

We demonstrate continuous wave (CW) terahertz generation from antennas fabricated on C12-irradiated semi-insulating (SI) GaAs substrates. The dark current drawn by the antennas fabricated on irradiated substrates is 3 to 4 orders of magnitude lower compared to antennas fabricated on un-irradiated substrates, while the photocurrents decrease by only 1.5 orders of magnitude. This can be attributed to the strong reduction of the carrier lifetime that is 2.5 orders of magnitude, with values around τrec=0.2ps. Reduced thermal heating allows for higher bias voltages to the irradiated antenna devices resulting in higher CW terahertz power, just slightly lower than that of low-temperature grown GaAs (LT GaAs)at similar excitation conditions.

© 2015 Optical Society of America

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