Abstract

Numerical simulations were used to study the transmittances (Ts) of ZnO/Al/ZnO (ZAZ) films with Al thicknesses between 1 and 40 nm. The simulations are validated using previously reported experimental results. Multilayers with Al thicknesses between 1 and 10 nm are shown to have average Ts between 75% and 90%, which decreased farther to 63 and 41% for the Al layer thicknesses of 20 and 40 nm, respectively. Variations in the ZnO thickness between 10 and 100 nm are shown to have little effect on the optical properties of the model multilayers for a given Al thickness. The reliability of the numerical simulations is tested by comparing them with experimental measurements on films produced using similar interlayer thicknesses. These are also shown to be comparable to the performance characteristics of indium tin oxide (ITO) anodes that are used currently in organic solar cells (OSCs) and organic light emitting diodes (OLEDs).

© 2015 Optical Society of America

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