Optical constants of In<sub>x</sub>Ga<sub>1&#x2212;x</sub>N (0 &#x2264; x &#x2264; 0.73) in the visible and near-infrared wavelength regimes

Arnab Hazari; Aniruddha Bhattacharya; Thomas Frost; Songrui Zhao; Md. Zunaid Baten; Zetian Mi; Pallab Bhattacharya

doi:10.1364/OL.40.003304

Optical constants of In_xGa_1−xN (0 ≤ x ≤ 0.73) in the visible and near-infrared wavelength regimes

Arnab Hazari, Aniruddha Bhattacharya, Thomas Frost, Songrui Zhao, Md. Zunaid Baten, Zetian Mi, and Pallab Bhattacharya

Optics Letters
Vol. 40,
Issue 14,
pp. 3304-3307
(2015)
•https://doi.org/10.1364/OL.40.003304

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Arnab Hazari, Aniruddha Bhattacharya, Thomas Frost, Songrui Zhao, Md. Zunaid Baten, Zetian Mi, and Pallab Bhattacharya, "Optical constants of In_xGa_1−xN (0 ≤ x ≤ 0.73) in the visible and near-infrared wavelength regimes," Opt. Lett. 40, 3304-3307 (2015)

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Related Topics
Table of Contents Category
- Spectroscopy
Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Optical constants (120.4530)
- Ellipsometry and polarimetry (240.2130)
- Photoluminescence (250.5230)
- Absorption (300.1030)

About this Article
History
- Original Manuscript: March 24, 2015
- Revised Manuscript: May 31, 2015
- Manuscript Accepted: June 19, 2015
- Published: July 9, 2015

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Abstract

Complex refractive indices of ${In}_{x} {Ga}_{1 - x} N$ epitaxial layers have been determined from analysis of data obtained by spectroscopic ellipsometry. The measurements were made in the wavelength range of 400–1687 nm. The samples were grown by plasma-assisted molecular beam epitaxy on (001) silicon substrate and are of the wurtzite crystalline form. A comparison of the fundamental absorption edge derived from analysis of measured data and the measured photoluminescence peak emission energy indicates a Stokes shift present in the alloys.

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Sample	Substrate Temperature (°C)	Unintentional Doping (n-type) $({cm}^{- 3})$	PL Emission Peak at 300 K (eV)	Absorption Peak Energy (eV)	Thickness (nm)	Surface Roughness (nm)
GaN	747	$5.0 \times 10^{16}$	3.38	3.75	$657.5 \pm 0.2$	$13.1 \pm 0.1$
${In}_{0.26} {Ga}_{0.74} N$	518	$1.5 \times 10^{17}$	2.44	2.88	$558.2 \pm 0.3$	$56.1 \pm 0.3$
${In}_{0.43} {Ga}_{0.57} N$	470	$2.3 \times 10^{17}$	1.91	2.33	$588.9 \pm 0.6$	$17.6 \pm 0.2$
${In}_{0.60} {Ga}_{0.40} N$	438	$5.2 \times 10^{17}$	1.55 (20 K)	2.01	$580.1 \pm 0.5$	$25.5 \pm 0.2$
${In}_{0.73} {Ga}_{0.27} N$	415	$7.3 \times 10^{17}$	1.09	1.68	$681.4 \pm 3.4$	$37.1 \pm 0.3$

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