An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and operability, which illustrated the possibility for high operation temperature application. At 150 K and operation bias, the 27 μm pixels exhibited dark current density to be , with 50% cutoff wavelength of 4.9 μm, quantum efficiency of 67% at peak responsivity (4.6 μm), and specific detectivity of Jones. At 90 K and below, the 27 μm pixels exhibited system limited dark current density, which is below , and specific detectivity of Jones. From 81 to 100 K, the FPA showed NEDT by using F/2.3 optics and a 9.69 ms integration time.
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