Abstract

A new type of mirror, based on guided-mode resonance, was proposed and discussed to provide a mirror having high reflectance and large wavelength dependence of reflection phase variation. The proposed mirror consists of a surface grating integrated in a channel waveguide on a high-reflection layer. A SiO2-based device was fabricated for 0.85-μm wavelength operation, and reflection phase variation of almost π, with wavelength change of sub-nanometers, was confirmed experimentally.

© 2014 Optical Society of America

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    [CrossRef]
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2012

2010

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

2009

Y. C. Chang and L. A. Coldren, IEEE J. Sel. Top. Quantum Electron. 15, 704 (2009).
[CrossRef]

C. J. Chang-Hasnain, Y. Zhou, M. C. Y. Huang, and C. Chase, IEEE J. Sel. Top. Quantum Electron. 15, 869 (2009).
[CrossRef]

I. Vartiainen, J. Tervo, and M. Kuittinen, Opt. Lett. 34, 1648 (2009).
[CrossRef]

2000

Z. Hegedus and R. Netterfield, Appl. Opt. 39, 1469 (2000).
[CrossRef]

K. Iga, IEEE J. Sel. Top. Quantum Electron. 6, 1201 (2000).
[CrossRef]

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

1998

1997

S. M. Norton, T. Erdogan, and G. M. Morris, J. Opt. Soc. Am. A 14, 629 (1997).
[CrossRef]

D. Rosenblatt, A. Sharon, and A. A. Friesem, IEEE J. Quantum Electron. 33, 2038 (1997).
[CrossRef]

1996

E. C. Vail, G. S. Li, W. Yuen, and C. J. Chang-Hasnain, Electron. Lett. 32, 1888 (1996).
[CrossRef]

1993

1992

R. Magnusson and S. S. Wang, Appl. Phys. Lett. 61, 1022 (1992).
[CrossRef]

1985

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

Akagawa, T.

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

Amano, T.

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

Anan, T.

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

Arai, M.

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

Awatsuji, Y.

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

S. Ura, K. Kintaka, J. Inoue, T. Ogura, K. Nishio, and Y. Awatsuji, in Proceedings of the 63rd Electronic Components & Technology Conference (IEEE, 2013), pp. 1874–1879.

Belharet, D.

Bimberg, D.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

Buet, X.

Chang, Y. C.

Y. C. Chang and L. A. Coldren, IEEE J. Sel. Top. Quantum Electron. 15, 704 (2009).
[CrossRef]

Chang-Hasnain, C. J.

C. J. Chang-Hasnain and W. Yang, Adv. Opt. Photon. 4, 379 (2012).
[CrossRef]

C. J. Chang-Hasnain, Y. Zhou, M. C. Y. Huang, and C. Chase, IEEE J. Sel. Top. Quantum Electron. 15, 869 (2009).
[CrossRef]

E. C. Vail, G. S. Li, W. Yuen, and C. J. Chang-Hasnain, Electron. Lett. 32, 1888 (1996).
[CrossRef]

Chase, C.

C. J. Chang-Hasnain, Y. Zhou, M. C. Y. Huang, and C. Chase, IEEE J. Sel. Top. Quantum Electron. 15, 869 (2009).
[CrossRef]

Coldren, L. A.

Y. C. Chang and L. A. Coldren, IEEE J. Sel. Top. Quantum Electron. 15, 704 (2009).
[CrossRef]

Daran, E.

Erdogan, T.

Friesem, A. A.

D. Rosenblatt, A. Sharon, and A. A. Friesem, IEEE J. Quantum Electron. 33, 2038 (1997).
[CrossRef]

Fukatsu, K.

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

Furukawa, N.

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

Gauthier-Lafaya, O.

Gustavsson, J. S.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

Hagland, Å.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

Hatakeyama, H.

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

Hatanaka, K.

K. Kintaka, T. Majima, J. Inoue, K. Hatanaka, J. Nishii, and S. Ura, Opt. Express 20, 1444 (2012).
[CrossRef]

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

Hegedus, Z.

Huang, M. C. Y.

C. J. Chang-Hasnain, Y. Zhou, M. C. Y. Huang, and C. Chase, IEEE J. Sel. Top. Quantum Electron. 15, 869 (2009).
[CrossRef]

Iga, K.

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

K. Iga, IEEE J. Sel. Top. Quantum Electron. 6, 1201 (2000).
[CrossRef]

Inoue, J.

K. Kintaka, T. Majima, J. Inoue, K. Hatanaka, J. Nishii, and S. Ura, Opt. Express 20, 1444 (2012).
[CrossRef]

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

S. Ura, K. Kintaka, J. Inoue, T. Ogura, K. Nishio, and Y. Awatsuji, in Proceedings of the 63rd Electronic Components & Technology Conference (IEEE, 2013), pp. 1874–1879.

Joel, A.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

Kintaka, K.

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

K. Kintaka, T. Majima, J. Inoue, K. Hatanaka, J. Nishii, and S. Ura, Opt. Express 20, 1444 (2012).
[CrossRef]

S. Ura, K. Kintaka, J. Inoue, T. Ogura, K. Nishio, and Y. Awatsuji, in Proceedings of the 63rd Electronic Components & Technology Conference (IEEE, 2013), pp. 1874–1879.

Kögel, B.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

Koyama, F.

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

Kuittinen, M.

Larson, A.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

Li, G. S.

E. C. Vail, G. S. Li, W. Yuen, and C. J. Chang-Hasnain, Electron. Lett. 32, 1888 (1996).
[CrossRef]

Liu, Z. S.

Lozes-Dupuy, F.

Magnusson, R.

Majima, T.

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

K. Kintaka, T. Majima, J. Inoue, K. Hatanaka, J. Nishii, and S. Ura, Opt. Express 20, 1444 (2012).
[CrossRef]

Mashev, L.

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

Monmayrant, A.

Morris, G. M.

Netterfield, R.

Nishii, J.

Nishio, K.

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

S. Ura, K. Kintaka, J. Inoue, T. Ogura, K. Nishio, and Y. Awatsuji, in Proceedings of the 63rd Electronic Components & Technology Conference (IEEE, 2013), pp. 1874–1879.

Nishiyama, N.

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

Norton, S. M.

Ogura, T.

S. Ura, K. Kintaka, J. Inoue, T. Ogura, K. Nishio, and Y. Awatsuji, in Proceedings of the 63rd Electronic Components & Technology Conference (IEEE, 2013), pp. 1874–1879.

Popov, E.

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

Rosenblatt, D.

D. Rosenblatt, A. Sharon, and A. A. Friesem, IEEE J. Quantum Electron. 33, 2038 (1997).
[CrossRef]

Sharon, A.

D. Rosenblatt, A. Sharon, and A. A. Friesem, IEEE J. Quantum Electron. 33, 2038 (1997).
[CrossRef]

Shin, D.

Suzuki, N.

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

Tervo, J.

Tibuleac, S.

Tokutome, K.

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

Tsuji, M.

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

Ura, S.

K. Kintaka, T. Majima, J. Inoue, K. Hatanaka, J. Nishii, and S. Ura, Opt. Express 20, 1444 (2012).
[CrossRef]

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

S. Ura, K. Kintaka, J. Inoue, T. Ogura, K. Nishio, and Y. Awatsuji, in Proceedings of the 63rd Electronic Components & Technology Conference (IEEE, 2013), pp. 1874–1879.

Vail, E. C.

E. C. Vail, G. S. Li, W. Yuen, and C. J. Chang-Hasnain, Electron. Lett. 32, 1888 (1996).
[CrossRef]

Vartiainen, I.

Wang, S. S.

S. S. Wang and R. Magnusson, Appl. Opt. 32, 2606 (1993).
[CrossRef]

R. Magnusson and S. S. Wang, Appl. Phys. Lett. 61, 1022 (1992).
[CrossRef]

Westbergh, P.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

Yang, W.

Young, P. P.

Yuen, W.

E. C. Vail, G. S. Li, W. Yuen, and C. J. Chang-Hasnain, Electron. Lett. 32, 1888 (1996).
[CrossRef]

Zhou, Y.

C. J. Chang-Hasnain, Y. Zhou, M. C. Y. Huang, and C. Chase, IEEE J. Sel. Top. Quantum Electron. 15, 869 (2009).
[CrossRef]

Adv. Opt. Photon.

Appl. Opt.

Appl. Phys. Express

J. Inoue, T. Majima, K. Hatanaka, K. Kintaka, K. Nishio, Y. Awatsuji, and S. Ura, Appl. Phys. Express 5, 022201 (2012).
[CrossRef]

Appl. Phys. Lett.

R. Magnusson and S. S. Wang, Appl. Phys. Lett. 61, 1022 (1992).
[CrossRef]

Electron. Lett.

P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Hagland, A. Larson, D. Bimberg, and A. Joel, Electron. Lett. 46, 1014 (2010).
[CrossRef]

E. C. Vail, G. S. Li, W. Yuen, and C. J. Chang-Hasnain, Electron. Lett. 32, 1888 (1996).
[CrossRef]

IEEE J. Quantum Electron.

D. Rosenblatt, A. Sharon, and A. A. Friesem, IEEE J. Quantum Electron. 33, 2038 (1997).
[CrossRef]

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji, IEEE J. Quantum Electron. 46, 890 (2010).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

C. J. Chang-Hasnain, Y. Zhou, M. C. Y. Huang, and C. Chase, IEEE J. Sel. Top. Quantum Electron. 15, 869 (2009).
[CrossRef]

K. Iga, IEEE J. Sel. Top. Quantum Electron. 6, 1201 (2000).
[CrossRef]

Y. C. Chang and L. A. Coldren, IEEE J. Sel. Top. Quantum Electron. 15, 704 (2009).
[CrossRef]

J. Opt. Soc. Am. A

Jpn. J. Appl. Phys.

F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai, and K. Iga, Jpn. J. Appl. Phys. 39, 1542 (2000).
[CrossRef]

Opt. Commun.

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

Opt. Express

Opt. Lett.

Other

S. Ura, K. Kintaka, J. Inoue, T. Ogura, K. Nishio, and Y. Awatsuji, in Proceedings of the 63rd Electronic Components & Technology Conference (IEEE, 2013), pp. 1874–1879.

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Figures (9)

Fig. 1.
Fig. 1.

Schematic cross section of the proposed device.

Fig. 2.
Fig. 2.

Schematic perspective view of fabricated devices.

Fig. 3.
Fig. 3.

Schematic cross section of fabricated devices.

Fig. 4.
Fig. 4.

(a) Optical microscope photograph and (b) scanning electron microscope image of the fabricated device.

Fig. 5.
Fig. 5.

Calculated wavelength dependences of reflectance and reflection phase. (a) Buffer layer thickness is 2.05 μm. (b) Buffer layer thickness is 2.10 μm. (c) Buffer layer thickness is 2.15 μm.

Fig. 6.
Fig. 6.

Experimental setup for measuring reflection-phase-variation.

Fig. 7.
Fig. 7.

Interference fringes obtained for device with buffer layer thickness of 1.99 μm.

Fig. 8.
Fig. 8.

Wavelength dependences of reflection phase of fabricated device.

Fig. 9.
Fig. 9.

Wavelength shift required for π variation of reflection phase.

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