Abstract

In this Letter, we report on the first integrated four-port polarizing beam splitter. The device operates on the principle of mode evolution and was implemented in a silicon-on-insulator silicon photonics platform and fabricated on a 300 mm CMOS line using 193 nm optical immersion lithography. The adiabatic transition forming of the structure enabled over a 150 nm bandwidth from λ1350 to λ1500nm, achieving a cross-talk level below 10dB over the entire band.

© 2014 Optical Society of America

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