Abstract

A IIIV/Si3N4 platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry–Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III–V to Si3N4 are measured to be 2.5±0.75dB.

© 2014 Optical Society of America

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