Abstract

This Letter describes a double-sided process to fabricate freestanding membrane devices on a GaN-on-silicon platform. The photoluminescence measurement is taken to characterize the optical performance. A large portion of the excited light from InGaN/GaN multiple quantum wells is trapped as waveguide modes and propagates in different directions. Experimental results show that the propagation direction of the waveguide mode can be converted into the direction normal to the surface at the edge of a freestanding membrane, and the emitted light is attenuated due to light propagation loss before it gets out from the edge. Subwavelength grating can also convert waveguide modes into air modes on a freestanding membrane. These results suggest that the emission efficiency can be greatly improved by employing more efficient light extraction methods and that GaN-based photonic waveguides are promising in the visible range.

© 2014 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. T. N. Oder, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 12 (2001).
    [CrossRef]
  2. R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
    [CrossRef]
  3. J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 1832 (2004).
    [CrossRef]
  4. Y.-W. Cheng, S.-C. Wang, Y.-F. Yin, L.-Y. Su, and J. Huang, Opt. Lett. 36, 1611 (2011).
    [CrossRef]
  5. X. Fu, B. Zhang, X. Kang, J. Deng, C. Xiong, T. Dai, X. Jiang, T. Yu, Z. Chen, and G. Y. Zhang, Opt. Express 19, A1104 (2011).
    [CrossRef]
  6. H. K. Lee, Y. H. Ko, G. S. R. Raju, and J. S. Yu, Opt. Express 20, 25058 (2012).
    [CrossRef]
  7. Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
    [CrossRef]
  8. Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
    [CrossRef]
  9. S.-C. Wang, Y.-W. Cheng, Y.-F. Yin, L.-Y. Chen, L.-Y. Su, Y.-J. Hung, and J. Huang, J. Lightwave Technol. 29, 3772 (2011).
    [CrossRef]
  10. C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
    [CrossRef]
  11. R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
    [CrossRef]
  12. W.-L. Yeh, C.-M. Fang, and Y.-P. Chiou, J. Disp. Technol. 9, 359 (2013).
    [CrossRef]
  13. Y. Wang, Z. Shi, X. Li, S. He, M. Zhang, and H. Zhu, Opt. Express 22, 667 (2014).
    [CrossRef]
  14. Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
    [CrossRef]
  15. S. Noda and M. Fujita, Nat. Photonics 3, 129 (2009).
    [CrossRef]
  16. E. Bulgan, Y. Kanamori, and K. Hane, Appl. Phys. Lett. 92, 101110 (2008).
    [CrossRef]

2014 (2)

Y. Wang, Z. Shi, X. Li, S. He, M. Zhang, and H. Zhu, Opt. Express 22, 667 (2014).
[CrossRef]

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

2013 (1)

W.-L. Yeh, C.-M. Fang, and Y.-P. Chiou, J. Disp. Technol. 9, 359 (2013).
[CrossRef]

2012 (1)

2011 (3)

2010 (1)

C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
[CrossRef]

2009 (4)

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

S. Noda and M. Fujita, Nat. Photonics 3, 129 (2009).
[CrossRef]

2008 (1)

E. Bulgan, Y. Kanamori, and K. Hane, Appl. Phys. Lett. 92, 101110 (2008).
[CrossRef]

2004 (1)

J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 1832 (2004).
[CrossRef]

2003 (1)

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

2001 (1)

T. N. Oder, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 12 (2001).
[CrossRef]

Airey, R.

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Bulgan, E.

E. Bulgan, Y. Kanamori, and K. Hane, Appl. Phys. Lett. 92, 101110 (2008).
[CrossRef]

Chen, C.-P.

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Chen, C.-Y.

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Chen, H.-H.

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Chen, J.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Chen, K.-T.

C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
[CrossRef]

Chen, L.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Chen, L.-Y.

S.-C. Wang, Y.-W. Cheng, Y.-F. Yin, L.-Y. Chen, L.-Y. Su, Y.-J. Hung, and J. Huang, J. Lightwave Technol. 29, 3772 (2011).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Chen, Z.

Cheng, Y.-W.

Y.-W. Cheng, S.-C. Wang, Y.-F. Yin, L.-Y. Su, and J. Huang, Opt. Lett. 36, 1611 (2011).
[CrossRef]

S.-C. Wang, Y.-W. Cheng, Y.-F. Yin, L.-Y. Chen, L.-Y. Su, Y.-J. Hung, and J. Huang, J. Lightwave Technol. 29, 3772 (2011).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Chiou, Y.-P.

W.-L. Yeh, C.-M. Fang, and Y.-P. Chiou, J. Disp. Technol. 9, 359 (2013).
[CrossRef]

Dai, J.-J.

C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
[CrossRef]

Dai, T.

Deng, J.

Dylewicz, R.

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Fang, C.-M.

W.-L. Yeh, C.-M. Fang, and Y.-P. Chiou, J. Disp. Technol. 9, 359 (2013).
[CrossRef]

Fry, P. W.

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Fu, X.

Fujita, M.

S. Noda and M. Fujita, Nat. Photonics 3, 129 (2009).
[CrossRef]

Garcia, M. L.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Hane, K.

E. Bulgan, Y. Kanamori, and K. Hane, Appl. Phys. Lett. 92, 101110 (2008).
[CrossRef]

He, S.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Y. Wang, Z. Shi, X. Li, S. He, M. Zhang, and H. Zhu, Opt. Express 22, 667 (2014).
[CrossRef]

Hogg, R. A.

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Hsieh, M.-Y.

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Huang, J.

Huang, J.-J.

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Hueting, N. A.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Hui, R.

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

Hung, Y.-J.

Jiang, H. X.

J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 1832 (2004).
[CrossRef]

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

T. N. Oder, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 12 (2001).
[CrossRef]

Jiang, X.

Jin, S. X.

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

Kanamori, Y.

E. Bulgan, Y. Kanamori, and K. Hane, Appl. Phys. Lett. 92, 101110 (2008).
[CrossRef]

Kang, X.

Ke, M.-Y.

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Ko, Y. H.

Lee, H. K.

Li, J.

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

Li, X.

Lin, C.-F.

C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
[CrossRef]

Lin, C.-M.

C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
[CrossRef]

Lin, J. Y.

J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 1832 (2004).
[CrossRef]

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

T. N. Oder, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 12 (2001).
[CrossRef]

Lin, M.-S.

C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
[CrossRef]

Martin, C.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Noda, S.

S. Noda and M. Fujita, Nat. Photonics 3, 129 (2009).
[CrossRef]

Oder, T. N.

T. N. Oder, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 12 (2001).
[CrossRef]

Pan, K.-M.

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Parbrook, P. J.

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Patela, S.

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Peng, L.-H.

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Raju, G. S. R.

Shakya, J.

J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 1832 (2004).
[CrossRef]

Shi, Z.

Y. Wang, Z. Shi, X. Li, S. He, M. Zhang, and H. Zhu, Opt. Express 22, 667 (2014).
[CrossRef]

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Su, L.-Y.

Taherion, S.

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

Tahraoui, A.

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

Wan, Y.

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

Wang, C.-Y.

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Wang, S.-C.

Wang, Y.

Y. Wang, Z. Shi, X. Li, S. He, M. Zhang, and H. Zhu, Opt. Express 22, 667 (2014).
[CrossRef]

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Wu, H.-M.

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Xiong, C.

Yang, C. C.

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

Yeh, W.-L.

W.-L. Yeh, C.-M. Fang, and Y.-P. Chiou, J. Disp. Technol. 9, 359 (2013).
[CrossRef]

Yin, Y.-F.

Yu, J. S.

Yu, T.

Zhang, B.

Zhang, G. Y.

Zhang, M.

Y. Wang, Z. Shi, X. Li, S. He, M. Zhang, and H. Zhu, Opt. Express 22, 667 (2014).
[CrossRef]

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Zhu, H.

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Y. Wang, Z. Shi, X. Li, S. He, M. Zhang, and H. Zhu, Opt. Express 22, 667 (2014).
[CrossRef]

Appl. Phys. Express (1)

Y. Wang, J. Chen, Z. Shi, S. He, M. L. Garcia, L. Chen, N. A. Hueting, C. Martin, M. Zhang, and H. Zhu, Appl. Phys. Express 7, 052201 (2014).
[CrossRef]

Appl. Phys. Lett. (4)

T. N. Oder, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 12 (2001).
[CrossRef]

R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 82, 1326 (2003).
[CrossRef]

J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 1832 (2004).
[CrossRef]

E. Bulgan, Y. Kanamori, and K. Hane, Appl. Phys. Lett. 92, 101110 (2008).
[CrossRef]

IEEE Electron Device Lett. (2)

C.-F. Lin, C.-M. Lin, K.-T. Chen, J.-J. Dai, and M.-S. Lin, IEEE Electron Device Lett. 31, 458 (2010).
[CrossRef]

Y.-W. Cheng, K.-M. Pan, L.-Y. Chen, M.-Y. Ke, C.-P. Chen, C.-Y. Chen, C. C. Yang, and J.-J. Huang, IEEE Electron Device Lett. 30, 1060 (2009).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

R. Dylewicz, S. Patela, R. A. Hogg, P. W. Fry, P. J. Parbrook, R. Airey, and A. Tahraoui, IEEE Photon. Technol. Lett. 21, 966 (2009).
[CrossRef]

J. Disp. Technol. (1)

W.-L. Yeh, C.-M. Fang, and Y.-P. Chiou, J. Disp. Technol. 9, 359 (2013).
[CrossRef]

J. Lightwave Technol. (1)

Nanotechnolgy (1)

Y.-W. Cheng, K.-M. Pan, C.-Y. Wang, H.-H. Chen, M.-Y. Ke, C.-P. Chen, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, Nanotechnolgy 20, 035202 (2009).
[CrossRef]

Nat. Photonics (1)

S. Noda and M. Fujita, Nat. Photonics 3, 129 (2009).
[CrossRef]

Opt. Express (3)

Opt. Lett. (1)

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1.
Fig. 1.

Schematic picture of the wafer used.

Fig. 2.
Fig. 2.

(a) Optical micrograph of freestanding membrane and (b) SEM image of fabricated grating.

Fig. 3.
Fig. 3.

Measured PL spectra.

Fig. 4.
Fig. 4.

(a)–(c) Lateral emission as the excited spot moves from center to left and (d) calculated ratio between the excited spot and lateral emission spot.

Fig. 5.
Fig. 5.

Lateral emission as the excited spot moves up.

Fig. 6.
Fig. 6.

Lateral emission in grating region: (a) excited location is outside the grating region and (b) excited location is in the grating region.

Metrics