Abstract

Vertical incidence GeSn/Ge multiquantum well (MQW) pin photodetectors on Si substrates were fabricated with a Sn concentration of 7%. The epitaxial structure was grown with a special low temperature molecular beam epitaxy process. The Ge barrier in the GeSn/Ge MQW was kept constant at 10 nm. The well width was varied between 6 and 12 nm. The GeSn/Ge MQW structures were grown pseudomorphically with the in-plane lattice constant of the Ge virtual substrate. The absorption edge shifts to longer wavelengths with thicker QWs in agreement with expectations from smaller quantization energies for the thicker QWs.

© 2014 Optical Society of America

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2014 (4)

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

B. R. Conley, A. Mosleh, S. A. Ghetmiri, W. Du, R. A. Soref, G. Sun, J. Margetis, J. Tolle, H. A. Naseem, and S. Q. Yu, Opt. Express 22, 15639 (2014).
[CrossRef]

2013 (4)

S. Su, D. Zhang, G. Zhang, C. Xue, and B. Cheng, Superlattices Microstruct. 64, 543 (2013).
[CrossRef]

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

2012 (3)

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, Opt. Express 20, 27297 (2012).
[CrossRef]

2011 (2)

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, Opt. Express 19, 6400 (2011).
[CrossRef]

2007 (3)

P. Moontragoon, Z. Ikonic, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007).
[CrossRef]

J. Kouvetakis and A. V. G. Chizmeshya, J. Mater. Chem. 17, 1649 (2007).
[CrossRef]

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

2005 (1)

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

1990 (1)

W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter, Appl. Phys. Lett. 57, 875 (1990).
[CrossRef]

1956 (1)

C. D. Thurmond, F. A. Trumbore, and M. Kowalchik, J. Chem. Phys. 25, 799 (1956).
[CrossRef]

Abstreiter, G.

W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter, Appl. Phys. Lett. 57, 875 (1990).
[CrossRef]

Aoki, T.

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

Arguirov, T.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

Bechler, S.

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

Benedetti, A.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Bratland, K. A.

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

Breuer, U.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Buca, D.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Burle, N.

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

Cao, Q.

Chang, G. E.

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

Chen, R.

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

Cheng, B.

S. Su, D. Zhang, G. Zhang, C. Xue, and B. Cheng, Superlattices Microstruct. 64, 543 (2013).
[CrossRef]

S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, Opt. Express 19, 6400 (2011).
[CrossRef]

Cheng, H. H.

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

Chiussi, S.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Chizmeshya, A. V. G.

J. Kouvetakis and A. V. G. Chizmeshya, J. Mater. Chem. 17, 1649 (2007).
[CrossRef]

Conley, B. R.

Desgardins, P.

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

Du, W.

Eberl, K.

W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter, Appl. Phys. Lett. 57, 875 (1990).
[CrossRef]

Escoubas, S.

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

Foo, Y. L.

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

Gallagher, J. D.

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

Gassenq, A.

Gencarelli, F.

Ghetmiri, S. A.

Gollhofer, M.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

Greene, J. E.

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

Grützmacher, D.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Haasch, R. T.

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

Harris, J. S.

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

Harrison, P.

P. Moontragoon, Z. Ikonic, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007).
[CrossRef]

Hartmann, J. M.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Herzog, H.-J.

H.-J. Herzog, in Properties of Silicon Germanium, and SiGe: Carbon, INSPEC, E. Kasper and K. Lyutovich, eds. (Institution of Electrical Engineers, 2000), p. 4.

Holländer, B.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Hu, W.

Huo, Y.

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

Ikonic, Z.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

P. Moontragoon, Z. Ikonic, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007).
[CrossRef]

Jiang, L.

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

Kamins, T. I.

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

Kaschel, M.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

Kasper, E.

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

Kittler, M.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

Koerner, R.

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

Körner, R.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

Kostecki, K.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

Kouvetakis, J.

J. Kouvetakis and A. V. G. Chizmeshya, J. Mater. Chem. 17, 1649 (2007).
[CrossRef]

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

Kowalchik, M.

C. D. Thurmond, F. A. Trumbore, and M. Kowalchik, J. Chem. Phys. 25, 799 (1956).
[CrossRef]

Li, H.

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

Lin, H.

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

Loo, R.

Lu, W.

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

Lyutovich, K.

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

Mantl, S.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Margetis, J.

Mashanov, V.

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

Mathews, J.

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

Menczigar, U.

W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter, Appl. Phys. Lett. 57, 875 (1990).
[CrossRef]

Menéndez, J.

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

Moontragoon, P.

P. Moontragoon, Z. Ikonic, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007).
[CrossRef]

Mosleh, A.

Mussler, G.

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Nakatsuka, O.

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

Narcy, G.

Naseem, H. A.

Oehme, M.

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

Ogawa, M.

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

Oliveira, F.

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

Roelkens, G.

Sakai, A.

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

Schirmer, A.

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

Schmid, M.

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

Schulze, J.

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

Senaratne, C. L.

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

Seo, H. S.

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

Shimura, Y.

Soref, R. A.

B. R. Conley, A. Mosleh, S. A. Ghetmiri, W. Du, R. A. Soref, G. Sun, J. Margetis, J. Tolle, H. A. Naseem, and S. Q. Yu, Opt. Express 22, 15639 (2014).
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H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
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H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

Spila, T.

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

Stoica, T.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Su, S.

S. Su, D. Zhang, G. Zhang, C. Xue, and B. Cheng, Superlattices Microstruct. 64, 543 (2013).
[CrossRef]

S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, Opt. Express 19, 6400 (2011).
[CrossRef]

Sun, G.

B. R. Conley, A. Mosleh, S. A. Ghetmiri, W. Du, R. A. Soref, G. Sun, J. Margetis, J. Tolle, H. A. Naseem, and S. Q. Yu, Opt. Express 22, 15639 (2014).
[CrossRef]

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

Takeuchi, S.

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

Thurmond, C. D.

C. D. Thurmond, F. A. Trumbore, and M. Kowalchik, J. Chem. Phys. 25, 799 (1956).
[CrossRef]

Tiedemann, A. T.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Tolle, J.

Trumbore, F. A.

C. D. Thurmond, F. A. Trumbore, and M. Kowalchik, J. Chem. Phys. 25, 799 (1956).
[CrossRef]

Tseng, H. H.

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

Van Campenhout, J.

Vincent, B.

Wang, Q.

Wang, W.

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W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter, Appl. Phys. Lett. 57, 875 (1990).
[CrossRef]

Werner, J.

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

Widmann, D.

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

Wirths, S.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

Wu, K. Y.

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

Xue, C.

S. Su, D. Zhang, G. Zhang, C. Xue, and B. Cheng, Superlattices Microstruct. 64, 543 (2013).
[CrossRef]

S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, Opt. Express 19, 6400 (2011).
[CrossRef]

Xue, H.

Yamamoto, K.

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

Yang, Y. J.

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

Ye, K.

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

Yu, S. Q.

Zaima, S.

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

Zhang, D.

S. Su, D. Zhang, G. Zhang, C. Xue, and B. Cheng, Superlattices Microstruct. 64, 543 (2013).
[CrossRef]

Zhang, G.

S. Su, D. Zhang, G. Zhang, C. Xue, and B. Cheng, Superlattices Microstruct. 64, 543 (2013).
[CrossRef]

S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, Opt. Express 19, 6400 (2011).
[CrossRef]

Zuo, Y.

Appl. Phys. Lett. (7)

H. Lin, R. Chen, W. Lu, Y. Huo, T. I. Kamins, and J. S. Harris, Appl. Phys. Lett. 100, 102109 (2012).
[CrossRef]

H. H. Tseng, K. Y. Wu, H. Li, V. Mashanov, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 102, 182106 (2013).
[CrossRef]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, Appl. Phys. Lett. 103, 192110 (2013).
[CrossRef]

H. H. Tseng, H. Li, V. Mashanov, Y. J. Yang, H. H. Cheng, G. E. Chang, R. A. Soref, and G. Sun, Appl. Phys. Lett. 103, 231907 (2013).
[CrossRef]

W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter, Appl. Phys. Lett. 57, 875 (1990).
[CrossRef]

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, Appl. Phys. Lett. 98, 061108 (2011).
[CrossRef]

M. Oehme, K. Kostecki, M. Schmid, M. Kaschel, M. Gollhofer, K. Ye, D. Widmann, R. Koerner, S. Bechler, E. Kasper, and J. Schulze, Appl. Phys. Lett. 104, 161115 (2014).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, and J. Schulze, IEEE Photon. Technol. Lett. 26, 187 (2014).
[CrossRef]

J. Appl. Phys. (2)

E. Kasper, N. Burle, S. Escoubas, J. Werner, M. Oehme, and K. Lyutovich, J. Appl. Phys. 111, 063507 (2012).
[CrossRef]

K. A. Bratland, Y. L. Foo, T. Spila, H. S. Seo, R. T. Haasch, P. Desgardins, and J. E. Greene, J. Appl. Phys. 97, 044904 (2005).
[CrossRef]

J. Chem. Phys. (1)

C. D. Thurmond, F. A. Trumbore, and M. Kowalchik, J. Chem. Phys. 25, 799 (1956).
[CrossRef]

J. Mater. Chem. (1)

J. Kouvetakis and A. V. G. Chizmeshya, J. Mater. Chem. 17, 1649 (2007).
[CrossRef]

Opt. Express (3)

Semicond. Sci. Technol. (2)

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima, Semicond. Sci. Technol. 22, S231 (2007).
[CrossRef]

P. Moontragoon, Z. Ikonic, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007).
[CrossRef]

Superlattices Microstruct. (1)

S. Su, D. Zhang, G. Zhang, C. Xue, and B. Cheng, Superlattices Microstruct. 64, 543 (2013).
[CrossRef]

Thin Solid Films (1)

M. Oehme, K. Kostecki, M. Schmid, F. Oliveira, E. Kasper, and J. Schulze, Thin Solid Films 557, 169 (2014).
[CrossRef]

Other (3)

Landolt-Börnstein, in Semiconductor Quantum Structures: Optical Properties, C. Klingshirn, ed. (Springer-Verlag, 2004), Vol. 34 C1/2.

H.-J. Herzog, in Properties of Silicon Germanium, and SiGe: Carbon, INSPEC, E. Kasper and K. Lyutovich, eds. (Institution of Electrical Engineers, 2000), p. 4.

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, J. Kouvetakis, and J. Menéndez, “Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials,” Solid State Electronics (to be published).

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Figures (6)

Fig. 1.
Fig. 1.

Schematic cross section of a GeSn MQW photodetector structure under normal incidence (left). The right picture shows the layer stack of the intrinsic MQW region. The width tw of the GeSn wells were varied in four different samples. The Ge barrier and the Ge spacer thicknesses were kept constant at tb=10nm and ts=20nm, respectively.

Fig. 2.
Fig. 2.

RSM of sample 3 with Si, Ge and Ge/GeSn MQW reflections (top). The GeSn/Ge MQW structure grows pseudomorphically with the in-plane lattice constant of the Ge p+ BL. The bottom figure shows omega/2 theta scans of all four samples.

Fig. 3.
Fig. 3.

Dark current density–voltage characteristics of the Ge/GeSn MQW photodetectors of sample 4 with different device radii. Inset: Dark current density versus thickness of the GeSn layers tw at a bias of 1V.

Fig. 4.
Fig. 4.

Optical responsivity as a function of incident photon energy under zero bias operation. Inset: Reflectivity measurements versus photon energy E of the complete device structures.

Fig. 5.
Fig. 5.

Effective absorption coefficient of the complete GeSn/Ge MQW under zero bias operation for different well width tw.

Fig. 6.
Fig. 6.

Absorption coefficient of the GeSn/Ge MQW structures as function of incident photon energy under zero bias operation for different well width. Inset: Squared absorption coefficient for the investigated samples as function of photon energy. The intersection of the linear fit to the energy axis determines the direct bandgap energy.

Tables (1)

Tables Icon

Table 1. Sample Structures, Lattice Parameters and Calculated Sn Concentrations of the Investigated Devices

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

a0=aperp(1ν)+2νapar1+ν,
Ropt=ηcRopt,idealηint,
ηint=eαctc(1eαeffti),
ηint=eαctc(1e10αGeSntw9αGetb2αGets),
EQW=Ebulk+ΔEtW2.

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