Enhanced near-infrared photodetection with avalanche gain in silicon microdisk resonators integrated with p-n diodes

Abstract

We investigate the photocurrent generation by two-photon absorption effect in silicon microdisk resonators integrated with $p\text{-}n$ diodes. The photocurrent is quite dependent on the $p\text{-}n$ junction position with respect to the whispering gallery mode. Avalanche gain increases significantly when the bias exceeds $-19\mathrm{V}$, leading to considerable enhancement of photocurrent. At $-22\mathrm{V}$ bias with on-chip optical power of 44.7 μW, the responsivity exceeds 1 A/W with an avalanche gain of 188 while the dark current is more than 50 times lower than the photocurrent.

© 2014 Optical Society of America

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