Abstract

Phosphor-in-glass (PiG) color converters for LED applications were fabricated with a mixture of phosphors, Y3Al5O12:Ce3+ (yellow) and CaAlSiN3:Eu2+ (red). The low sintering temperature (550°C) of SiO2Na2ORO (R=Ba, Zn) glass powder enabled the inclusion of CaAlSiN3:Eu2+ (red) phosphor which cannot be embedded with conventional glass powders for PiGs. By simply varying the mixing ratio of glass to phosphors as well as the ratio of yellow to red phosphors, the facile control of the CIE chromaticity coordinates and correlated color temperature of the LED following the Planckian locus has been achieved. Phosphors were well distributed within the glass matrix without noticeable reactions, preserving the enhanced thermal quenching property of the PiG compared to those with silicone resins, for LEDs.

© 2014 Optical Society of America

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2014 (2)

2013 (1)

2012 (4)

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

H. S. Kim, T. Horikawa, H. Hanzawa, and K. Machida, J. Phys.: Conf. Ser. 379, 012016 (2012).
[CrossRef]

Y. K. Lee, J. S. Lee, J. Heo, W. B. Im, and W. J. Chung, Opt. Lett. 37, 3276 (2012).
[CrossRef]

M.-H. Chang, D. Das, P. V. Varde, and M. Pecht, Microelectron. Reliab. 52, 762 (2012).

2011 (1)

S. Nishiura, S. Tanabe, K. Fujioka, and Y. Fujimoto, Opt. Mater. 33, 688 (2011).

2010 (1)

2009 (2)

V. Bachmann, C. Ronda, and A. Meijerink, Chem. Mater. 21, 2077 (2009).
[CrossRef]

T. Nakanishi and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 15, 1171 (2009).
[CrossRef]

2008 (1)

S. Fujita, A. Sakamoto, and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 14, 1387 (2008).
[CrossRef]

2005 (3)

S. Fujita, S. Yoshihara, A. Sakamoto, S. Yamamoto, and S. Tanabe, Proc. SPIE 5941, 594111 (2005).
[CrossRef]

S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, Proc. SPIE 5941, 594112 (2005).
[CrossRef]

N. Narendran and Y. Gu, J. Display Technol. 1, 167 (2005).
[CrossRef]

2004 (1)

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth 268, 449 (2004).
[CrossRef]

1986 (1)

G. A. Luoma and R. D. Rowland, J. Appl. Polym. Sci. 32, 5777 (1986).
[CrossRef]

Arunkumar, P.

Bachmann, V.

V. Bachmann, C. Ronda, and A. Meijerink, Chem. Mater. 21, 2077 (2009).
[CrossRef]

Chang, M.-H.

M.-H. Chang, D. Das, P. V. Varde, and M. Pecht, Microelectron. Reliab. 52, 762 (2012).

Chen, J.-M.

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

Chen, W.-T.

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

Chung, W. J.

Das, D.

M.-H. Chang, D. Das, P. V. Varde, and M. Pecht, Microelectron. Reliab. 52, 762 (2012).

Deng, L.

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth 268, 449 (2004).
[CrossRef]

Freyssinier, J. P.

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth 268, 449 (2004).
[CrossRef]

Fujimoto, Y.

S. Nishiura, S. Tanabe, K. Fujioka, and Y. Fujimoto, Opt. Mater. 33, 688 (2011).

Fujioka, K.

S. Nishiura, S. Tanabe, K. Fujioka, and Y. Fujimoto, Opt. Mater. 33, 688 (2011).

Fujita, S.

S. Fujita, A. Sakamoto, and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 14, 1387 (2008).
[CrossRef]

S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, Proc. SPIE 5941, 594112 (2005).
[CrossRef]

S. Fujita, S. Yoshihara, A. Sakamoto, S. Yamamoto, and S. Tanabe, Proc. SPIE 5941, 594111 (2005).
[CrossRef]

Gu, Y.

N. Narendran and Y. Gu, J. Display Technol. 1, 167 (2005).
[CrossRef]

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth 268, 449 (2004).
[CrossRef]

Hanzawa, H.

H. S. Kim, T. Horikawa, H. Hanzawa, and K. Machida, J. Phys.: Conf. Ser. 379, 012016 (2012).
[CrossRef]

Heo, J.

Hintzen, H. T.

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

Horikawa, T.

H. S. Kim, T. Horikawa, H. Hanzawa, and K. Machida, J. Phys.: Conf. Ser. 379, 012016 (2012).
[CrossRef]

Hu, S.-F.

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

Im, W. B.

Kim, H. S.

H. S. Kim, T. Horikawa, H. Hanzawa, and K. Machida, J. Phys.: Conf. Ser. 379, 012016 (2012).
[CrossRef]

Kim, S.

Lee, H.

Lee, I. J.

Lee, J. S.

Lee, S.

Lee, Y. K.

Liu, R.-S.

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

Luoma, G. A.

G. A. Luoma and R. D. Rowland, J. Appl. Polym. Sci. 32, 5777 (1986).
[CrossRef]

Machida, K.

H. S. Kim, T. Horikawa, H. Hanzawa, and K. Machida, J. Phys.: Conf. Ser. 379, 012016 (2012).
[CrossRef]

Meijerink, A.

V. Bachmann, C. Ronda, and A. Meijerink, Chem. Mater. 21, 2077 (2009).
[CrossRef]

Nakanishi, T.

T. Nakanishi and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 15, 1171 (2009).
[CrossRef]

Narendran, N.

N. Narendran and Y. Gu, J. Display Technol. 1, 167 (2005).
[CrossRef]

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth 268, 449 (2004).
[CrossRef]

Nishiura, S.

S. Nishiura, S. Tanabe, K. Fujioka, and Y. Fujimoto, Opt. Mater. 33, 688 (2011).

Pecht, M.

M.-H. Chang, D. Das, P. V. Varde, and M. Pecht, Microelectron. Reliab. 52, 762 (2012).

Ronda, C.

V. Bachmann, C. Ronda, and A. Meijerink, Chem. Mater. 21, 2077 (2009).
[CrossRef]

Rowland, R. D.

G. A. Luoma and R. D. Rowland, J. Appl. Polym. Sci. 32, 5777 (1986).
[CrossRef]

Sakamoto, A.

S. Fujita, A. Sakamoto, and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 14, 1387 (2008).
[CrossRef]

S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, Proc. SPIE 5941, 594112 (2005).
[CrossRef]

S. Fujita, S. Yoshihara, A. Sakamoto, S. Yamamoto, and S. Tanabe, Proc. SPIE 5941, 594111 (2005).
[CrossRef]

Sheu, H.-S.

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

Sohn, K.-S.

Tanabe, S.

S. Nishiura, S. Tanabe, K. Fujioka, and Y. Fujimoto, Opt. Mater. 33, 688 (2011).

T. Nakanishi and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 15, 1171 (2009).
[CrossRef]

S. Fujita, A. Sakamoto, and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 14, 1387 (2008).
[CrossRef]

S. Fujita, S. Yoshihara, A. Sakamoto, S. Yamamoto, and S. Tanabe, Proc. SPIE 5941, 594111 (2005).
[CrossRef]

S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, Proc. SPIE 5941, 594112 (2005).
[CrossRef]

Unithrattil, S.

Varde, P. V.

M.-H. Chang, D. Das, P. V. Varde, and M. Pecht, Microelectron. Reliab. 52, 762 (2012).

Yamamoto, S.

S. Fujita, S. Yoshihara, A. Sakamoto, S. Yamamoto, and S. Tanabe, Proc. SPIE 5941, 594111 (2005).
[CrossRef]

S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, Proc. SPIE 5941, 594112 (2005).
[CrossRef]

Yeh, C.-W.

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

Yi, S.

S. Yi, W. J. Chung, and J. Heo, J. Am. Ceram. Soc. 97, 342 (2014).
[CrossRef]

Yoshihara, S.

S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, Proc. SPIE 5941, 594112 (2005).
[CrossRef]

S. Fujita, S. Yoshihara, A. Sakamoto, S. Yamamoto, and S. Tanabe, Proc. SPIE 5941, 594111 (2005).
[CrossRef]

Yu, H.

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth 268, 449 (2004).
[CrossRef]

Chem. Mater. (1)

V. Bachmann, C. Ronda, and A. Meijerink, Chem. Mater. 21, 2077 (2009).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

S. Fujita, A. Sakamoto, and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 14, 1387 (2008).
[CrossRef]

T. Nakanishi and S. Tanabe, IEEE J. Sel. Top. Quantum Electron. 15, 1171 (2009).
[CrossRef]

J. Am. Ceram. Soc. (1)

S. Yi, W. J. Chung, and J. Heo, J. Am. Ceram. Soc. 97, 342 (2014).
[CrossRef]

J. Am. Chem. Soc. (1)

C.-W. Yeh, W.-T. Chen, R.-S. Liu, S.-F. Hu, H.-S. Sheu, J.-M. Chen, and H. T. Hintzen, J. Am. Chem. Soc. 134, 14108 (2012).
[CrossRef]

J. Appl. Polym. Sci. (1)

G. A. Luoma and R. D. Rowland, J. Appl. Polym. Sci. 32, 5777 (1986).
[CrossRef]

J. Cryst. Growth (1)

N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, J. Cryst. Growth 268, 449 (2004).
[CrossRef]

J. Display Technol. (1)

J. Phys.: Conf. Ser. (1)

H. S. Kim, T. Horikawa, H. Hanzawa, and K. Machida, J. Phys.: Conf. Ser. 379, 012016 (2012).
[CrossRef]

Microelectron. Reliab. (1)

M.-H. Chang, D. Das, P. V. Varde, and M. Pecht, Microelectron. Reliab. 52, 762 (2012).

Opt. Lett. (4)

Opt. Mater. (1)

S. Nishiura, S. Tanabe, K. Fujioka, and Y. Fujimoto, Opt. Mater. 33, 688 (2011).

Proc. SPIE (2)

S. Fujita, S. Yoshihara, A. Sakamoto, S. Yamamoto, and S. Tanabe, Proc. SPIE 5941, 594111 (2005).
[CrossRef]

S. Tanabe, S. Fujita, S. Yoshihara, A. Sakamoto, and S. Yamamoto, Proc. SPIE 5941, 594112 (2005).
[CrossRef]

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Figures (6)

Fig. 1.
Fig. 1.

Photographs, PL spectra, and CIE coordinates of PiGs with SBR glasses, with varying content of YAG:Ce3+ and CASN:Eu2+ phosphors in wt. %. Sintering temperature was 750°C and thickness was 250 μm.

Fig. 2.
Fig. 2.

Photographs and PL intensity of the CASN:Eu2+ phosphor after heat treatment at each temperature for 30 min.

Fig. 3.
Fig. 3.

Photographs and CIE coordinates of PiGs with LTL glasses, with varying contents of YAG:Ce3+ and CASN:Eu2+ hosphors. Sintering temperature was 550°C and thickness was 250 μm.

Fig. 4.
Fig. 4.

PL spectra of LTL-PiGs. (a) Varied mixing ratio of LTL glass:YAG:Ce3+, (b) increasing CASN:Eu2+ content with fixed GTP at 8.51.5, (c) increasing CASN:Eu2+ content with fixed GTP ratio at 91, and (d) replacing YAG:Ce3+ with CASN:Eu2+ with fixed GTP ratio at 91. PiGs were mounted on 450 nm blue LED.

Fig. 5.
Fig. 5.

Time resolved emission spectra of LTL-PiG with LTL(8.5)YAG(1.5) and 0.2 wt. % of CASN:Eu2+ with λex=450nm. The inset figure shows the intensity decay of 540 nm emission.

Fig. 6.
Fig. 6.

FE-SEM image and EDAX results of LTL-PiG prepared with GTP ratio of 91 with additional 0.1 wt. % of CASN:Eu2+.

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