Abstract

Pattern-integrated interference lithography (PIIL) has recently been proposed as a rapid, single-step, and wafer-scale fabrication technique for custom-modified one-, two- and three-dimensional periodic structures. Among these structures, photonic-crystal devices have significant potential applications. In this work, we simulate the fabrication of two-dimensional photonic-crystal devices by PIIL using a rigorous vector modeling and realistic photolithographic conditions. We also model the etched patterns in silicon and evaluate the photonic-crystal motif-area and motif-displacement errors. We further calculate the device intensity transmission spectra and show that the performance of PIIL-produced devices are comparable to, and in some cases are superior to, that of their idealized equivalents.

© 2014 Optical Society of America

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