Abstract

Nanostructures were created on the surface of optical glass using nanosphere lithography. The substrates were etched with vapor-phase hydrofluoric (HF) acid. The etching rate was studied and compared with existing results of wet and dry HF etching. An empirical etching rate formula is found for etching depth up to 300 nm. The subsequent artificial material layer demonstrated enhanced transmittance in optical wavelengths.

© 2014 Optical Society of America

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2013 (2)

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

E. Wang and Y. Zhao, Proc. SPIE 8818, 881805 (2013).
[CrossRef]

2007 (1)

2006 (3)

Y. Takabayashi, M. Uemoto, K. Aoki, T. Odake, and T. Korenaga, Analyst 131, 573 (2006).
[CrossRef]

T. Akashi and Y. Yoshimura, J. Micromech. Miroeng. 16, 1051 (2006).
[CrossRef]

E. Thiénot, F. Domingo, E. Cambril, and C. Gosse, Microelectron. Eng. 83, 1155 (2006).
[CrossRef]

2005 (2)

Y. Zhao, J. Wang, and G. Mao, Opt. Lett. 30, 1885 (2005).
[CrossRef]

J. H. Park, N.-E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. 82, 119 (2005).
[CrossRef]

2004 (1)

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

2003 (3)

L. Li, T. Abe, and M. Esashi, J. Vac. Sci. Technol. B 21, 2545 (2003).
[CrossRef]

E. Metwalli and C. G. Pantano, Nucl. Instrum. Methods Phys. Res., Sect. B 207, 21 (2003).
[CrossRef]

T. Ichiki, Y. Sugiyama, T. Ujiie, and Y. Horiike, J. Vac. Sci. Technol. B 21, 2188 (2003).
[CrossRef]

2001 (3)

C. L. Haynes and R. P. Van Duyne, J. Phys. Chem. B 105, 5599 (2001).
[CrossRef]

X. Li, T. Abe, and M. Esashi, Sens. Actuators A 87, 139 (2001).
[CrossRef]

A. Grosse, M. Grewe, and H. Fouckhardt, J. Micromech. Microeng. 11, 257 (2001).
[CrossRef]

2000 (1)

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

1999 (1)

P. W. Leech, Vacuum 55, 191 (1999).
[CrossRef]

1996 (1)

K. Williams and R. Muller, J. Microelectromech. Syst. 5, 256 (1996).
[CrossRef]

Abe, T.

L. Li, T. Abe, and M. Esashi, J. Vac. Sci. Technol. B 21, 2545 (2003).
[CrossRef]

X. Li, T. Abe, and M. Esashi, Sens. Actuators A 87, 139 (2001).
[CrossRef]

Ahn, C. H.

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

Akashi, T.

T. Akashi and Y. Yoshimura, J. Micromech. Miroeng. 16, 1051 (2006).
[CrossRef]

Aoki, K.

Y. Takabayashi, M. Uemoto, K. Aoki, T. Odake, and T. Korenaga, Analyst 131, 573 (2006).
[CrossRef]

Baert, K.

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Beaucage, G.

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

Bender, H.

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Cambril, E.

E. Thiénot, F. Domingo, E. Cambril, and C. Gosse, Microelectron. Eng. 83, 1155 (2006).
[CrossRef]

Choi, J.

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

De Moor, P.

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Domingo, F.

E. Thiénot, F. Domingo, E. Cambril, and C. Gosse, Microelectron. Eng. 83, 1155 (2006).
[CrossRef]

Du Bois, B.

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Esashi, M.

L. Li, T. Abe, and M. Esashi, J. Vac. Sci. Technol. B 21, 2545 (2003).
[CrossRef]

X. Li, T. Abe, and M. Esashi, Sens. Actuators A 87, 139 (2001).
[CrossRef]

Fouckhardt, H.

A. Grosse, M. Grewe, and H. Fouckhardt, J. Micromech. Microeng. 11, 257 (2001).
[CrossRef]

Gosse, C.

E. Thiénot, F. Domingo, E. Cambril, and C. Gosse, Microelectron. Eng. 83, 1155 (2006).
[CrossRef]

Grewe, M.

A. Grosse, M. Grewe, and H. Fouckhardt, J. Micromech. Microeng. 11, 257 (2001).
[CrossRef]

Grosse, A.

A. Grosse, M. Grewe, and H. Fouckhardt, J. Micromech. Microeng. 11, 257 (2001).
[CrossRef]

Haynes, C. L.

C. L. Haynes and R. P. Van Duyne, J. Phys. Chem. B 105, 5599 (2001).
[CrossRef]

Horiike, Y.

T. Ichiki, Y. Sugiyama, T. Ujiie, and Y. Horiike, J. Vac. Sci. Technol. B 21, 2188 (2003).
[CrossRef]

Huang, N.

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

Ichiki, T.

T. Ichiki, Y. Sugiyama, T. Ujiie, and Y. Horiike, J. Vac. Sci. Technol. B 21, 2188 (2003).
[CrossRef]

Jiang, H.

Korenaga, T.

Y. Takabayashi, M. Uemoto, K. Aoki, T. Odake, and T. Korenaga, Analyst 131, 573 (2006).
[CrossRef]

Lee, J.

J. H. Park, N.-E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. 82, 119 (2005).
[CrossRef]

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

Lee, J. Y.

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

Lee, N.-E.

J. H. Park, N.-E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. 82, 119 (2005).
[CrossRef]

Leech, P. W.

P. W. Leech, Vacuum 55, 191 (1999).
[CrossRef]

Li, L.

L. Li, T. Abe, and M. Esashi, J. Vac. Sci. Technol. B 21, 2545 (2003).
[CrossRef]

Li, X.

X. Li, T. Abe, and M. Esashi, Sens. Actuators A 87, 139 (2001).
[CrossRef]

Lu, C.

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

Mao, G.

Metwalli, E.

E. Metwalli and C. G. Pantano, Nucl. Instrum. Methods Phys. Res., Sect. B 207, 21 (2003).
[CrossRef]

Muller, R.

K. Williams and R. Muller, J. Microelectromech. Syst. 5, 256 (1996).
[CrossRef]

Nevin, J. H.

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

Odake, T.

Y. Takabayashi, M. Uemoto, K. Aoki, T. Odake, and T. Korenaga, Analyst 131, 573 (2006).
[CrossRef]

Pantano, C. G.

E. Metwalli and C. G. Pantano, Nucl. Instrum. Methods Phys. Res., Sect. B 207, 21 (2003).
[CrossRef]

Park, H. D.

J. H. Park, N.-E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. 82, 119 (2005).
[CrossRef]

Park, J. H.

J. H. Park, N.-E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. 82, 119 (2005).
[CrossRef]

Park, J. S.

J. H. Park, N.-E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. 82, 119 (2005).
[CrossRef]

Puntambekar, A.

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

Song, T.

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

Sugiyama, Y.

T. Ichiki, Y. Sugiyama, T. Ujiie, and Y. Horiike, J. Vac. Sci. Technol. B 21, 2188 (2003).
[CrossRef]

Takabayashi, Y.

Y. Takabayashi, M. Uemoto, K. Aoki, T. Odake, and T. Korenaga, Analyst 131, 573 (2006).
[CrossRef]

Tan, W.

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

Thiénot, E.

E. Thiénot, F. Domingo, E. Cambril, and C. Gosse, Microelectron. Eng. 83, 1155 (2006).
[CrossRef]

Uemoto, M.

Y. Takabayashi, M. Uemoto, K. Aoki, T. Odake, and T. Korenaga, Analyst 131, 573 (2006).
[CrossRef]

Ujiie, T.

T. Ichiki, Y. Sugiyama, T. Ujiie, and Y. Horiike, J. Vac. Sci. Technol. B 21, 2188 (2003).
[CrossRef]

Van Duyne, R. P.

C. L. Haynes and R. P. Van Duyne, J. Phys. Chem. B 105, 5599 (2001).
[CrossRef]

Van Hoof, C.

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Verbist, A.

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Wang, E.

E. Wang and Y. Zhao, Proc. SPIE 8818, 881805 (2013).
[CrossRef]

Wang, J.

Wang, L.

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

Wang, Y.

Williams, K.

K. Williams and R. Muller, J. Microelectromech. Syst. 5, 256 (1996).
[CrossRef]

Witvrouw, A.

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Yoshimura, Y.

T. Akashi and Y. Yoshimura, J. Micromech. Miroeng. 16, 1051 (2006).
[CrossRef]

Yu, K.

Zhang, J.

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

Zhao, Y.

E. Wang and Y. Zhao, Proc. SPIE 8818, 881805 (2013).
[CrossRef]

Y. Zhao, J. Wang, and G. Mao, Opt. Lett. 30, 1885 (2005).
[CrossRef]

Analyst (1)

Y. Takabayashi, M. Uemoto, K. Aoki, T. Odake, and T. Korenaga, Analyst 131, 573 (2006).
[CrossRef]

J. Microelectromech. Syst. (1)

K. Williams and R. Muller, J. Microelectromech. Syst. 5, 256 (1996).
[CrossRef]

J. Micromech. Microeng. (1)

A. Grosse, M. Grewe, and H. Fouckhardt, J. Micromech. Microeng. 11, 257 (2001).
[CrossRef]

J. Micromech. Miroeng. (1)

T. Akashi and Y. Yoshimura, J. Micromech. Miroeng. 16, 1051 (2006).
[CrossRef]

J. Phys. Chem. B (1)

C. L. Haynes and R. P. Van Duyne, J. Phys. Chem. B 105, 5599 (2001).
[CrossRef]

J. Solid State Chem. (1)

W. Tan, N. Huang, L. Wang, T. Song, C. Lu, L. Wang, and J. Zhang, J. Solid State Chem. 201, 13 (2013).
[CrossRef]

J. Vac. Sci. Technol. B (2)

L. Li, T. Abe, and M. Esashi, J. Vac. Sci. Technol. B 21, 2545 (2003).
[CrossRef]

T. Ichiki, Y. Sugiyama, T. Ujiie, and Y. Horiike, J. Vac. Sci. Technol. B 21, 2188 (2003).
[CrossRef]

Microelectron. Eng. (2)

J. H. Park, N.-E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. 82, 119 (2005).
[CrossRef]

E. Thiénot, F. Domingo, E. Cambril, and C. Gosse, Microelectron. Eng. 83, 1155 (2006).
[CrossRef]

Nucl. Instrum. Methods Phys. Res., Sect. B (1)

E. Metwalli and C. G. Pantano, Nucl. Instrum. Methods Phys. Res., Sect. B 207, 21 (2003).
[CrossRef]

Opt. Lett. (2)

Proc. IEEE (1)

C. H. Ahn, J. Choi, G. Beaucage, J. H. Nevin, J. Lee, A. Puntambekar, and J. Y. Lee, Proc. IEEE 92, 154 (2004).
[CrossRef]

Proc. SPIE (2)

E. Wang and Y. Zhao, Proc. SPIE 8818, 881805 (2013).
[CrossRef]

A. Witvrouw, B. Du Bois, P. De Moor, A. Verbist, C. Van Hoof, H. Bender, and K. Baert, Proc. SPIE 4174, 130 (2000).
[CrossRef]

Sens. Actuators A (1)

X. Li, T. Abe, and M. Esashi, Sens. Actuators A 87, 139 (2001).
[CrossRef]

Vacuum (1)

P. W. Leech, Vacuum 55, 191 (1999).
[CrossRef]

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Figures (9)

Fig. 1.
Fig. 1.

Side view of NSL process. (a) Unprocessed substrate. (b) Self-assembled monolayer of nanoparticles as a mask. (c) Etched substrate. (d) Final pattern on substrate after mask removal.

Fig. 2.
Fig. 2.

Top view of self-assembled nanoparticle layer.

Fig. 3.
Fig. 3.

Top view of less than one layer of nanoparticles.

Fig. 4.
Fig. 4.

Setup for HF vapor phase etching glass nanostructures.

Fig. 5.
Fig. 5.

AFM scan of etched glass substrate over a 7.5×10μm area.

Fig. 6.
Fig. 6.

Depth of etch versus total time over HF acid vapor.

Fig. 7.
Fig. 7.

Comparison of (A) wet etching rates of SiO2 and (B) vapor etching rates of optical glass in this study.

Fig. 8.
Fig. 8.

Vapor phase HF etching rate comparison between (A) optical glass in this study and (B) SiO2 from [16].

Fig. 9.
Fig. 9.

Enhanced transmission of etched glass slide relative to that of a blank glass slide.

Tables (1)

Tables Icon

Table 1. Etching Data

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

SiO2+4HF>SiF4(g)+2H2O
SiO2+6HF>H2SiF6+2H2O.

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