Abstract

On-chip, high-power, erbium-doped distributed feedback lasers are demonstrated in a CMOS-compatible fabrication flow. The laser cavities consist of silicon nitride waveguide and grating features, defined by wafer-scale immersion lithography and an erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The large mode size lasers demonstrate single-mode continuous wave operation with a maximum output power of 75 mW without any thermal damage. The laser output power does not saturate at high pump intensities and is, therefore, capable of delivering even higher on-chip signals if a stronger pump is utilized. The amplitude noise of the laser is investigated and the laser is shown to be stable and free from self-pulsing when the pump power is sufficiently above threshold.

© 2014 Optical Society of America

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