Abstract

In this Letter, a III–V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III–V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. Over 10,000 h lifetime can be reached.

© 2013 Optical Society of America

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Corrections

Yejin Zhang, Hongwei Qu, Hailing Wang, Siriguleng Zhang, Shaodong Ma, Aiyi Qi, Zhigang Feng, Hongling Peng, and Wanhua Zheng, "Hybrid III-V/silicon single mode laser with periodic microstructures: erratum," Opt. Lett. 38, 1902-1902 (2013)
https://www.osapublishing.org/ol/abstract.cfm?uri=ol-38-11-1902

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