Ag nanocone enhanced light trapping in the silicon substrate is numerically investigated. For a wide range of the dielectric spacer thickness, the normalized scattering cross section of the rear located particles is higher than that of the front located particles, which is contrary to previous reports. This design not only avoids the conflict with the detrimental Fano effect but is also beneficial to the rear located particles. The fraction of the incident light scattered into silicon is calculated. The path length enhancement is assessed. The Ag nanocone shows highly competitive light-trapping potential.
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