Abstract

Heterogeneous III–V/Si integration with a compact optical vertical interconnect access is fabricated and the light coupling efficiency between the III–V/Si waveguide and the silicon nanophotonic waveguide is characterized. The III–V semiconductor material is directly bonded to the silicon-on-insulator (SOI) substrate and etched to form the III–V/Si waveguide for a higher light confinement in the active region. The compact optical vertical interconnect access is formed through tapering a III–V and an SOI layer in the same direction. The measured III–V/Si waveguide has a light coupling efficiency above 90% to the silicon photonic layer with the tapering structure. This heterogeneous and light coupling structure can provide an efficient platform for photonic systems on chip, including passive and active devices.

© 2013 Optical Society of America

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