Abstract

We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of ∼72.8  mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of ∼72 relative to the responsivity of ∼1.0  mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of ∼7  GHz and an open eye diagram at 15  Gbit/s upon 8 V.

© 2013 Optical Society of America

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2013 (2)

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

J. J. Ackert, A. S. Karar, D. J. Paez, P. E. Jessop, J. C. Cartledge, and A. P. Knights, Opt. Express 21, 19530 (2013).
[CrossRef]

2012 (1)

2010 (4)

2009 (2)

2008 (1)

2007 (1)

S. Fathpour, K. K. Tsia, and B. Jalali, IEEE J. Quantum Electron. 43, 1211 (2007).
[CrossRef]

2000 (1)

A. Yariv, Electron. Lett. 36, 321 (2000).
[CrossRef]

1987 (1)

R. Soref and B. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).
[CrossRef]

1955 (1)

S. L. Miller, Phys. Rev. 99, 1234 (1955).
[CrossRef]

Absil, P.

Ackert, J. J.

Akbari, A.

Alloatti, L.

Baehr-Jones, T.

Bennett, B.

R. Soref and B. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).
[CrossRef]

Bergman, K.

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

Berini, P.

Cartledge, J. C.

Casalino, M.

Chen, H.

H. Chen and A. W. Poon, Appl. Phys. Lett. 96, 191106 (2010).
[CrossRef]

H. Chen, X. Luo, and A. W. Poon, Appl. Phys. Lett. 95, 171111 (2009).
[CrossRef]

Choi, W. Y.

Coppola, G.

Driscoll, J.

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

Fathpour, S.

S. Fathpour, K. K. Tsia, and B. Jalali, IEEE J. Quantum Electron. 43, 1211 (2007).
[CrossRef]

Geis, M.

Gioffrè, M.

Grein, M.

Grote, R.

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

Hillerkuss, D.

Hochberg, M.

Iodice, M.

Jalali, B.

S. Fathpour, K. K. Tsia, and B. Jalali, IEEE J. Quantum Electron. 43, 1211 (2007).
[CrossRef]

Jessop, P. E.

Karar, A. S.

Knights, A. P.

Komorowska, K.

Korn, D.

Lee, M. J.

Lennon, D.

Lepage, G.

Li, Y.

Y. Li and A. W. Poon, in Conference on Lasers and Electro-optics: Science and Innovations (OSA, 2013).

Luo, X.

H. Chen, X. Luo, and A. W. Poon, Appl. Phys. Lett. 95, 171111 (2009).
[CrossRef]

Lyszczarz, T.

Miller, S. L.

S. L. Miller, Phys. Rev. 99, 1234 (1955).
[CrossRef]

Moretti, L.

Ng, K. K.

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, 2006).

Osgood, R.

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

Padmaraju, K.

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

Paez, D. J.

Pantouvaki, M.

Poon, A. W.

H. Chen and A. W. Poon, Appl. Phys. Lett. 96, 191106 (2010).
[CrossRef]

H. Chen, X. Luo, and A. W. Poon, Appl. Phys. Lett. 95, 171111 (2009).
[CrossRef]

Y. Li and A. W. Poon, in Conference on Lasers and Electro-optics: Science and Innovations (OSA, 2013).

Rendina, I.

Scherer, A.

Sirleto, L.

Soref, R.

R. Soref and B. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).
[CrossRef]

Souhan, B.

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

Spector, S.

Sze, S. M.

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, 2006).

Tait, R. N.

Tsia, K. K.

S. Fathpour, K. K. Tsia, and B. Jalali, IEEE J. Quantum Electron. 43, 1211 (2007).
[CrossRef]

Van Campenhout, J.

Verheyen, P.

Yariv, A.

A. Yariv, Electron. Lett. 36, 321 (2000).
[CrossRef]

Yoon, J.

Yu, H.

Appl. Phys. Lett. (2)

H. Chen, X. Luo, and A. W. Poon, Appl. Phys. Lett. 95, 171111 (2009).
[CrossRef]

H. Chen and A. W. Poon, Appl. Phys. Lett. 96, 191106 (2010).
[CrossRef]

Electron. Lett. (1)

A. Yariv, Electron. Lett. 36, 321 (2000).
[CrossRef]

IEEE J. Quantum Electron. (2)

S. Fathpour, K. K. Tsia, and B. Jalali, IEEE J. Quantum Electron. 43, 1211 (2007).
[CrossRef]

R. Soref and B. Bennett, IEEE J. Quantum Electron. 23, 123 (1987).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

R. Grote, K. Padmaraju, B. Souhan, J. Driscoll, K. Bergman, and R. Osgood, IEEE Photon. Technol. Lett. 25, 67 (2013).

J. Lightwave Technol. (1)

Opt. Express (5)

Opt. Lett. (1)

Phys. Rev. (1)

S. L. Miller, Phys. Rev. 99, 1234 (1955).
[CrossRef]

Other (2)

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, 2006).

Y. Li and A. W. Poon, in Conference on Lasers and Electro-optics: Science and Innovations (OSA, 2013).

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