Abstract

In this study, a low cross-talk 2×2 silicon electro-optic switch matrix based on a double-gate configuration is proposed and experimentally demonstrated. The switch matrix consists of four Mach–Zehnder-based 2×2 switching elements with 400 μm long modulation arms. Low cross-talk values of 31 and 43dB are, respectively, obtained for the “cross” and “bar” states over a 40 nm wide wavelength range around 1550 nm. The values for the total steady-state power consumption of the “cross” and “bar” states are 40.8 and 19.1 mW, respectively.

© 2013 Optical Society of America

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