Abstract

In this study, a low cross-talk 2×2 silicon electro-optic switch matrix based on a double-gate configuration is proposed and experimentally demonstrated. The switch matrix consists of four Mach–Zehnder-based 2×2 switching elements with 400 μm long modulation arms. Low cross-talk values of 31 and 43dB are, respectively, obtained for the “cross” and “bar” states over a 40 nm wide wavelength range around 1550 nm. The values for the total steady-state power consumption of the “cross” and “bar” states are 40.8 and 19.1 mW, respectively.

© 2013 Optical Society of America

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J. Lightwave Technol.

Opt. Express

Opt. Lett.

Other

Y. Luo, G. L. Li, X. Z. Zheng, J. Yao, H. Thacker, J. H. Lee, J. E. Cunningham, K. Raj, and A. V. Krishnamoorthy, in 9th IEEE International Conference on Group IV Photonics (IEEE, 2012), p. 150.

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Figures (5)

Fig. 1.
Fig. 1.

Schematic drawings of the (a) 2×2 silicon electro-optic switch matrix based on double-gate configuration and (b) 2×2 switching element with single-arm modulation scheme.

Fig. 2.
Fig. 2.

Microscope images of the (a) fabricated 2×2 silicon electro-optic switching element. (b) Fabricated 2×2 silicon electro-optic switch matrix.

Fig. 3.
Fig. 3.

Measured transmission spectra switching response of the 2×2 silicon electro-optic switching element.

Fig. 4.
Fig. 4.

Measured transmission spectra of the 2×2 silicon electro-optic switch matrix based on a double-gate configuration.

Fig. 5.
Fig. 5.

Measured transmission spectra switching response of the 2×2 silicon electro-optic switch matrix from 1 to 1, 2, 3, and 4 in the “cross” state.

Tables (1)

Tables Icon

Table 1. Electrical Drive Parameters for Each Switching Element

Metrics