We report on an integrated -shifted Bragg grating array using a wafer-scale complementary metal-oxide semiconductor (CMOS) compatible process with silicon–nitride waveguides. A sidewall grating was used to simplify the fabrication process, and a sampled Bragg grating with equivalent phase-shift structure was employed to achieve an accurate phase shift. A four-channel -shifted Bragg grating array with highly uniform channel spacing was demonstrated with a measured channel spacing variation below 10 pm (1.25 GHz). The high channel-spacing uniformity and the CMOS-compatibility of the demonstrated device hold promise for integrated distributed feedback laser arrays for various silicon photonic applications.
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