Abstract

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure.

© 2013 Optical Society of America

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  1. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, Nat. Photonics 3, 180 (2009).
    [CrossRef]
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    [CrossRef]
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  5. C.-Y. Huang, H.-M. Ku, C.-Z. Liao, and S. Chao, Opt. Express 18, 10674 (2010).
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  6. Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”
  7. R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]

2012 (2)

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, IEEE Photonics J. 4, 613 (2012).
[CrossRef]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

2011 (2)

X. Fu, B. Zhang, X. Kang, J. Deng, C. Xiong, T. Dai, X. Jiang, T. Yu, Z. Chen, and G. Y. Zhang, Opt. Express 19, A1104 (2011).
[CrossRef]

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

2010 (4)

Y.-K. Kuo, M.-C. Tsai, S.-H. Yen, T.-C. Hsu, and Y.-J. Shen, IEEE J. Quantum Electron. 46, 1214 (2010).
[CrossRef]

J.-Y. Chang, M.-C. Tsai, and Y.-K. Kuo, Opt. Lett. 35, 1368 (2010).
[CrossRef]

C.-Y. Huang, H.-M. Ku, C.-Z. Liao, and S. Chao, Opt. Express 18, 10674 (2010).
[CrossRef]

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

2009 (2)

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, Nat. Photonics 3, 180 (2009).
[CrossRef]

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

2008 (1)

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

2007 (1)

Y. L. Li, Y. R. Huang, and Y. H. Lai, Appl. Phys. Lett. 91, 181113 (2007).
[CrossRef]

2006 (1)

2003 (1)

I. Vurgaftman, and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
[CrossRef]

Chang, C. Y.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Chang, J.-Y.

Chang, S. P.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Chao, S.

Charash, R.

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

Chen, Z.

Cho, C.-Y.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Cho, H. K.

Choe, Y. H.

Choi, J.

Choi, J.-H.

Corbett, B.

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

Dai, T.

Demir, H. V.

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, IEEE Photonics J. 4, 613 (2012).
[CrossRef]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

DenBaars, S. P.

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, IEEE Photonics J. 4, 613 (2012).
[CrossRef]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, Nat. Photonics 3, 180 (2009).
[CrossRef]

Deng, J.

Dikme, Y.

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Dupuis, R. D.

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

Fu, X.

Han, J.

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

Han, S.-H.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Hasanov, N.

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Hsu, T.-C.

Y.-K. Kuo, M.-C. Tsai, S.-H. Yen, T.-C. Hsu, and Y.-J. Shen, IEEE J. Quantum Electron. 46, 1214 (2010).
[CrossRef]

Huang, C.-Y.

Huang, Y. R.

Y. L. Li, Y. R. Huang, and Y. H. Lai, Appl. Phys. Lett. 91, 181113 (2007).
[CrossRef]

Humphreys, C. J.

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

Jang, J.

Ji, Y.

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Jiang, X.

Ju, Z.

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Ju, Z. G.

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Kang, S. W.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Kang, X.

Kappers, M. J.

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

Kim, J.

Kim, J. W.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Kim, S. H.

Kim, S.-K.

Kim, T.-H.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Kim, Y. C.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Ku, H.-M.

Ku, P. H.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Kuo, H. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Kuo, Y.-K.

Y.-K. Kuo, M.-C. Tsai, S.-H. Yen, T.-C. Hsu, and Y.-J. Shen, IEEE J. Quantum Electron. 46, 1214 (2010).
[CrossRef]

J.-Y. Chang, M.-C. Tsai, and Y.-K. Kuo, Opt. Lett. 35, 1368 (2010).
[CrossRef]

Kyaw, Z.

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Lai, Y. H.

Y. L. Li, Y. R. Huang, and Y. H. Lai, Appl. Phys. Lett. 91, 181113 (2007).
[CrossRef]

Lan, Y. P.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Lee, B.

Lee, J. S.

Lee, K.

Lee, K.-D.

Lee, S.-J.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Lee, Y.-H.

Lewis, L.

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

Li, J. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Li, Y. L.

Y. L. Li, Y. R. Huang, and Y. H. Lai, Appl. Phys. Lett. 91, 181113 (2007).
[CrossRef]

Liao, C.-Z.

Lin, C. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Liu, J. P.

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

Liu, W.

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Lu, T. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Maaskant, P. P.

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

McAleese, C.

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

Meyer, J. R.

I. Vurgaftman, and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
[CrossRef]

Nakamura, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, Nat. Photonics 3, 180 (2009).
[CrossRef]

Park, S. H.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Park, S.-J.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Park, T.-Y.

S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S. H. Park, S. W. Kang, J. W. Kim, Y. C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
[CrossRef]

Pimputkar, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, Nat. Photonics 3, 180 (2009).
[CrossRef]

Ryou, J. H.

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

Shen, G. D.

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

Shen, Y.-J.

Y.-K. Kuo, M.-C. Tsai, S.-H. Yen, T.-C. Hsu, and Y.-J. Shen, IEEE J. Quantum Electron. 46, 1214 (2010).
[CrossRef]

Speck, J. S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, Nat. Photonics 3, 180 (2009).
[CrossRef]

Sun, X. W.

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, IEEE Photonics J. 4, 613 (2012).
[CrossRef]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Tan, S. T.

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, IEEE Photonics J. 4, 613 (2012).
[CrossRef]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Tsai, M.-C.

Y.-K. Kuo, M.-C. Tsai, S.-H. Yen, T.-C. Hsu, and Y.-J. Shen, IEEE J. Quantum Electron. 46, 1214 (2010).
[CrossRef]

J.-Y. Chang, M.-C. Tsai, and Y.-K. Kuo, Opt. Lett. 35, 1368 (2010).
[CrossRef]

Vurgaftman, I.

I. Vurgaftman, and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
[CrossRef]

Wang, C. H.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Wang, H. B.

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

Wang, S. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Xiong, C.

Yang, H. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

Yen, S.-H.

Y.-K. Kuo, M.-C. Tsai, S.-H. Yen, T.-C. Hsu, and Y.-J. Shen, IEEE J. Quantum Electron. 46, 1214 (2010).
[CrossRef]

Yu, T.

Zhang, B.

Zhang, G. Y.

Zhang, Z. H.

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, Appl. Phys. Lett. 100, 123503 (2012).
[CrossRef]

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Zheng, K.

Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

Appl. Phys. Lett. (6)

R. Charash, P. P. Maaskant, L. Lewis, C. McAleese, M. J. Kappers, C. J. Humphreys, and B. Corbett, Appl. Phys. Lett. 95, 151103 (2009).
[CrossRef]

Y. L. Li, Y. R. Huang, and Y. H. Lai, Appl. Phys. Lett. 91, 181113 (2007).
[CrossRef]

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, Appl. Phys. Lett. 99, 171106 (2011).
[CrossRef]

J. P. Liu, J. H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, and H. B. Wang, Appl. Phys. Lett. 93, 021102 (2008).
[CrossRef]

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Z. H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir are preparing a paper to be called, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,”

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Figures (5)

Fig. 1.
Fig. 1.

Schematic diagram of the LED structures: Sample I with undoped QBs and Sample II with p-doped QBs.

Fig. 2.
Fig. 2.

PL spectra of (a) Sample I with undoped QBs and (b) Sample II with the last three barriers doped with Mg.

Fig. 3.
Fig. 3.

Electroluminescence spectra of LED samples driven at different current levels. Top: Sample I without p-doped QBs (inset: ratio of peak intensity at 460 and 425 nm). Bottom: Sample II with p-doped QBs (top inset: ratio of peak intensity at 458 and 422 nm; bottom inset: zoom-in view of EL peak at 422 nm).

Fig. 4.
Fig. 4.

(a) Simulated electron and hole distributions within MQW regions and (b) energy band diagrams for LED structures with and without p-type doped QBs.

Fig. 5.
Fig. 5.

(a) IV characteristics and (b) EQE and number of photons measured for Sample I with undoped QBs and Sample II with p-type doped QBs.

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