Abstract

A compact rearrangeable nonblocking 4×4 silicon electro-optic switch matrix based on a Spanke–Beneš network is proposed and fabricated by a 0.18 μm standard commercial complementary metal-oxide semiconductor line. By respectively modulating the two modulation arms with a push–pull drive, a cross talk (CT) of less than 18dB is obtained for the switching element with 150-μm-long modulation arms. The total steady-state power consumption of the switch matrix ranges from 4.46 to 35.92 mW for different routing states. The CT values of the routing state with the minimum and maximum power consumptions are less than 19dB and less than 12dB, respectively.

© 2013 Optical Society of America

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