Abstract

Background scattered light should normally be reduced in industrial fabrication processes; however, we demonstrated that background scattered light from an optical element contains significant structural information about the element. This was revealed by quite good agreement between the measured scattering intensity distribution of a sample and a computer simulation of the light intensity from the sample. The intensity distribution from a carefully fabricated sample with artificially controlled defects was obtained with a measurement system designed to measure ultraweak background scattered light covering an intensity range of over 1010.

© 2013 Optical Society of America

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References

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2012

2007

2006

A. J. Caley, M. Braun, A. J. Waddie, and M. R. Taghizadeh, Proc. SPIE 6185, 6185E (2006).
[CrossRef]

S. H. Lee, H.-S. Jeong, and Y. S. Jin, J. Opt. Soc. Korea 10, 105 (2006).
[CrossRef]

2002

V. P. Kiryanov, V. G. Nikitin, and A. G. Verkhogliad, Proc. SPIE 4900, 977 (2002).
[CrossRef]

1966

K. S. Yee, IEEE Trans. Antennas Propagat. AP-14, 302 (1966).
[CrossRef]

Bar, M.

Barada, D.

T. Meguriya, T. Kiire, D. Barada, Y. Hayasaki, and T. Yatagai, ISOT2011 International Symposium on Optomechatronic Technologies, Hong Kong (2011).

Braun, M.

A. J. Caley, M. Braun, A. J. Waddie, and M. R. Taghizadeh, Proc. SPIE 6185, 6185E (2006).
[CrossRef]

Burge, J. H.

Caley, A. J.

A. J. Caley, M. Braun, A. J. Waddie, and M. R. Taghizadeh, Proc. SPIE 6185, 6185E (2006).
[CrossRef]

Gross, H.

Hayasaki, Y.

T. Meguriya, T. Kiire, D. Barada, Y. Hayasaki, and T. Yatagai, ISOT2011 International Symposium on Optomechatronic Technologies, Hong Kong (2011).

Heidenreich, S.

Henn, M.-A.

Jeong, H.-S.

Jin, Y. S.

Kiire, T.

T. Meguriya, T. Kiire, D. Barada, Y. Hayasaki, and T. Yatagai, ISOT2011 International Symposium on Optomechatronic Technologies, Hong Kong (2011).

Kiryanov, V. P.

V. P. Kiryanov, V. G. Nikitin, and A. G. Verkhogliad, Proc. SPIE 4900, 977 (2002).
[CrossRef]

Lee, S. H.

Meguriya, T.

T. Meguriya, T. Kiire, D. Barada, Y. Hayasaki, and T. Yatagai, ISOT2011 International Symposium on Optomechatronic Technologies, Hong Kong (2011).

Nikitin, V. G.

V. P. Kiryanov, V. G. Nikitin, and A. G. Verkhogliad, Proc. SPIE 4900, 977 (2002).
[CrossRef]

Rathsfeld, A.

Taghizadeh, M. R.

A. J. Caley, M. Braun, A. J. Waddie, and M. R. Taghizadeh, Proc. SPIE 6185, 6185E (2006).
[CrossRef]

Verkhogliad, A. G.

V. P. Kiryanov, V. G. Nikitin, and A. G. Verkhogliad, Proc. SPIE 4900, 977 (2002).
[CrossRef]

Waddie, A. J.

A. J. Caley, M. Braun, A. J. Waddie, and M. R. Taghizadeh, Proc. SPIE 6185, 6185E (2006).
[CrossRef]

Yatagai, T.

T. Meguriya, T. Kiire, D. Barada, Y. Hayasaki, and T. Yatagai, ISOT2011 International Symposium on Optomechatronic Technologies, Hong Kong (2011).

Yee, K. S.

K. S. Yee, IEEE Trans. Antennas Propagat. AP-14, 302 (1966).
[CrossRef]

Zhou, P.

Appl. Opt.

IEEE Trans. Antennas Propagat.

K. S. Yee, IEEE Trans. Antennas Propagat. AP-14, 302 (1966).
[CrossRef]

J. Opt. Soc. Korea

Proc. SPIE

A. J. Caley, M. Braun, A. J. Waddie, and M. R. Taghizadeh, Proc. SPIE 6185, 6185E (2006).
[CrossRef]

V. P. Kiryanov, V. G. Nikitin, and A. G. Verkhogliad, Proc. SPIE 4900, 977 (2002).
[CrossRef]

Other

T. Meguriya, T. Kiire, D. Barada, Y. Hayasaki, and T. Yatagai, ISOT2011 International Symposium on Optomechatronic Technologies, Hong Kong (2011).

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Figures (5)

Fig. 1.
Fig. 1.

Schematic diagram of the system used to measure background scattered light intensity from a sample.

Fig. 2.
Fig. 2.

Schematic diagram of the defect shape: (a) chip defect, (b) shift defect, and (c) shrink defect.

Fig. 3.
Fig. 3.

Simulation results of scattered intensity: (a) chip, (b) shift, and (c) shrink defects.

Fig. 4.
Fig. 4.

Simulation results of scattered intensity of shrink defects (d=100, 120, 140, 160, 180, and 200 nm).

Fig. 5.
Fig. 5.

Measurements of scattered light intensity from a sample with shift defects.

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