Abstract
We report on photoluminescence in the 1.3 and 1.7 μm spectral ranges in silicon doped with dysprosium. This is attributed to the internal transitions between the second excited state and the ground state, and between the third excited state and the ground state. Luminescence is achieved by Dy implantation into Si substrates codoped with boron, to form dislocation loops, and show a strong dependence on fabrication process. The spectra consist of several sharp lines with the strongest emission at 1736 nm, observed up to 200 K. No luminescence is observed in samples without B codoping, showing the paramount importance of dislocation loops to enable the Dy emission.
© 2013 Optical Society of America
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