Abstract

Numerical simulations were carried out on micropillar cavities consisting of Si/SiO2 distributed Bragg reflectors (DBRs) with an InP spacer layer. Owing to a large refractive index contrast of 2 in DBRs, cavities with just 4/6.5 top/bottom DBR pairs that give a low pillar height (4.5μm), have noticeable Purcell-enhancement effect in the 1.55-μm band. With careful designs on cavities with diameters of 2.30μm, a quality factor of up to 3300, a nominal Purcell factor of up to 110, and an output efficiency of 60% are obtainable. These results ensure improvement of operation frequency and enhancement of photon indistinguishability for 1.55-μm single photon sources based on InAs/InP quantum dots.

© 2013 Optical Society of America

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