Abstract

The authors report that the elemental composition ratio of Ga to In in a CuIn1xGaxSe2 compound semiconductor, a thin-film solar cell material, can be measured with little influence of plasma property changes by laser-induced breakdown spectroscopy (λ=1064nm, τ=5ns). It is shown that the similarity in excitation energy levels of the selected Ga and In emission lines and the fact that these elements belong to the same group of the periodic table are the critical factors ensuring the independence of intensity ratio on plasma conditions.

© 2013 Optical Society of America

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