Abstract

An antenna-coupled field effect transistor (FET) as a plasma wave terahertz detector is used with the current steering to record separately the gate–source and gate–drain photoresponses and their phase sensitive combination. This method is based on the observation that the plasmon–terminal coupling is cut off in saturation, resulting in only one-sided sensitivity. A polarimetric example is presented with intensity and polarization angle reconstruction using a single three-terminal antenna-coupled Si-metal-oxide semiconductor FET (MOSFET). The technique is applicable to various detection schemes and technologies (high electron mobility transistors and GaAs-, GaN-, and Si-MOSFETs), and other application possibilities are discussed.

© 2013 Optical Society of America

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