Abstract

High-brightness, edge-emitting diode laser arrays integrated with a phase shifter have been designed and fabricated at a wavelength of about 910 nm. Stable out-of-phase mode is generated through coupling evanescently and converted to be nearly in-phase by the phase modulation from the phase shifter. With a very simple manufacture process, stable single-lobe far-field pattern is achieved in the slow axis when the continuous wave output power exceeds 460mW/facet, and the divergence angle is only 2.7 times the diffraction-limited value. Such device shows a promising future for high-brightness application with low cost and easy fabrication.

© 2013 Optical Society of America

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