Abstract

We report on InP-based p-type/intrinsic/n-type (PIN) photodiodes with a novel strain-compensated type-II InGaAs/GaAsSb quantum well active region. The device has optical response out to 3.0 μm, specific detectivity (D*) of 7.73×109cmHz0.5/W at 290 K for 2.7 μm. These preliminary results show that this novel strain-compensated approach leads to similar performance when compared to a conventional strain-compensated approach.

© 2013 Optical Society of America

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