Abstract

The emitters at the edges of high-power laser bars tend to produce less power than emitters that are near the center of the bar. We suggest that shear strain, which owes to strain induced by bonding, creates through a photoelastic effect a weak birefringence that rotates the plane of polarization of the light. A rotation of the plane of polarization reduces the net gain for the lasing modes and hence leads to a lower output power for the emitters at the edges of the bars, where the shear strain is dominant.

© 2013 Optical Society of America

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  1. R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
    [CrossRef]
  2. S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
    [CrossRef]
  3. S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
    [CrossRef]
  4. C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
    [CrossRef]
  5. O. Rehioui, “Fiabilité de diodes laser de forte puissance 808 nm microassemblées pour des applications spatiales: approche expérimentale et modélisations par éléments finis,” Ph.D. thesis (Université Bordeaux 1, 2011).
  6. D. T. Cassidy, S. K. K. Lam, B. Lakshmi, and D. M. Bruce, Appl. Opt. 43, 1811 (2004).
    [CrossRef]
  7. B. Lakshmi, D. T. Cassidy, and B. J. Robinson, J. Appl. Phys. 79, 7640 (1996).
    [CrossRef]
  8. J. F. Nye, Physical Properties of Crystals (Oxford University, 1985), pp. 243–254.
  9. R. W. Dixon, J. Appl. Phys. 38, 5149 (1967).
    [CrossRef]
  10. N. Suzuki and K. Tada, Jpn. J. Appl. Phys. 23, 1011 (1984).
    [CrossRef]
  11. M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
    [CrossRef]

2012 (2)

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

2011 (1)

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

2005 (1)

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

2004 (1)

2002 (1)

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

1996 (1)

B. Lakshmi, D. T. Cassidy, and B. J. Robinson, J. Appl. Phys. 79, 7640 (1996).
[CrossRef]

1984 (1)

N. Suzuki and K. Tada, Jpn. J. Appl. Phys. 23, 1011 (1984).
[CrossRef]

1967 (1)

R. W. Dixon, J. Appl. Phys. 38, 5149 (1967).
[CrossRef]

Amuzuvi, C. K.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

Andrianov, A.

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

Boucke, K.

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

Bruce, D. M.

Bull, S.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

Cassidy, D. T.

D. T. Cassidy, S. K. K. Lam, B. Lakshmi, and D. M. Bruce, Appl. Opt. 43, 1811 (2004).
[CrossRef]

B. Lakshmi, D. T. Cassidy, and B. J. Robinson, J. Appl. Phys. 79, 7640 (1996).
[CrossRef]

Dixon, R. W.

R. W. Dixon, J. Appl. Phys. 38, 5149 (1967).
[CrossRef]

Dodds, S. R. A.

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

Erbert, G.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

Harrison, I.

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

Hempel, M.

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

Jankowski, D.

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

Krakowski, M.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

Lakshmi, B.

D. T. Cassidy, S. K. K. Lam, B. Lakshmi, and D. M. Bruce, Appl. Opt. 43, 1811 (2004).
[CrossRef]

B. Lakshmi, D. T. Cassidy, and B. J. Robinson, J. Appl. Phys. 79, 7640 (1996).
[CrossRef]

Lam, S. K. K.

Landesman, J.-P.

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

Larkins, E. C.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

Lim, J. J.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

Michel, N.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

Morgan, J.

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

Nagle, J.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

Nye, J. F.

J. F. Nye, Physical Properties of Crystals (Oxford University, 1985), pp. 243–254.

Oudart, M.

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

Rehioui, O.

O. Rehioui, “Fiabilité de diodes laser de forte puissance 808 nm microassemblées pour des applications spatiales: approche expérimentale et modélisations par éléments finis,” Ph.D. thesis (Université Bordeaux 1, 2011).

Robinson, B. J.

B. Lakshmi, D. T. Cassidy, and B. J. Robinson, J. Appl. Phys. 79, 7640 (1996).
[CrossRef]

Scholz, C.

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

Schröder, D.

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

Schwirzke, S.

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

Sumpf, B.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

Suzuki, N.

N. Suzuki and K. Tada, Jpn. J. Appl. Phys. 23, 1011 (1984).
[CrossRef]

Tada, K.

N. Suzuki and K. Tada, Jpn. J. Appl. Phys. 23, 1011 (1984).
[CrossRef]

Tomm, J. W.

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

Xia, R.

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

Ziegler, M.

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. A (1)

M. Hempel, M. Ziegler, S. Schwirzke, J. W. Tomm, D. Jankowski, and D. Schröder, Appl. Phys. A 107, 371 (2012).
[CrossRef]

Appl. Phys. Lett. (1)

C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Appl. Phys. Lett. 98, 241108 (2011).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

R. Xia, E. C. Larkins, I. Harrison, S. R. A. Dodds, A. Andrianov, J. Morgan, and J.-P. Landesman, IEEE Photon. Technol. Lett. 14, 893 (2002).
[CrossRef]

J. Appl. Phys. (3)

S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, J. Appl. Phys. 98, 063101 (2005).
[CrossRef]

B. Lakshmi, D. T. Cassidy, and B. J. Robinson, J. Appl. Phys. 79, 7640 (1996).
[CrossRef]

R. W. Dixon, J. Appl. Phys. 38, 5149 (1967).
[CrossRef]

Jpn. J. Appl. Phys. (1)

N. Suzuki and K. Tada, Jpn. J. Appl. Phys. 23, 1011 (1984).
[CrossRef]

Semicond. Sci. Technol. (1)

S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, and E. C. Larkins, Semicond. Sci. Technol. 27, 094012 (2012).
[CrossRef]

Other (2)

O. Rehioui, “Fiabilité de diodes laser de forte puissance 808 nm microassemblées pour des applications spatiales: approche expérimentale et modélisations par éléments finis,” Ph.D. thesis (Université Bordeaux 1, 2011).

J. F. Nye, Physical Properties of Crystals (Oxford University, 1985), pp. 243–254.

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