By employing an insulating zinc oxide (-ZnO) as an electron accelerating layer, and an -type ZnO as an active layer, ultraviolet (UV) emissions at 385 nm caused by the excitation of the -ZnO layer by the accelerated electrons from the -ZnO layer have been realized. By replacing the active layer with larger bandgap and properly optimizing the structure, shorter wavelength emissions at around 328 nm have been obtained. Considering that the -type doping of wide bandgap semiconductors is still a challenging issue, the results reported in this Letter may provide a promising alternative route to UV emissions.
© 2012 Optical Society of AmericaFull Article | PDF Article
Xiaochuan Xia, Rensheng Shen, Yuanda Liu, Dechao Yang, Shiwei Song, Long Zhao, Zhifeng Shi, Xiangping Li, Hongwei Liang, Baolin Zhang, and Guotong Du
Opt. Mater. Express 2(1) 38-44 (2012)
Yu Fei Chan, Wei Su, Chang Xing Zhang, Zheng Long Wu, Ying Tang, Xiao Qi Sun, and Hai Jun Xu
Opt. Express 20(22) 24280-24287 (2012)
Yong-Seok Choi, Jang-Won Kang, Byeong-Hyeok Kim, Dong-Keun Na, Sang-Jun Lee, and Seong-Ju Park
Opt. Express 21(10) 11698-11704 (2013)