Abstract

A highly disordered GaN nanostructure was grown by using hydride vapor phase epitaxy on an Si(100) substrate, and its diffuse reflectivity was measured in the 200–1200 nm spectral range by using an integrating sphere. A modified multiple-scattering-based model successfully explained the spectral distribution of diffuse reflectivity of this highly disordered GaN nanostructure.

© 2012 Optical Society of America

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