A highly disordered GaN nanostructure was grown by using hydride vapor phase epitaxy on an Si(100) substrate, and its diffuse reflectivity was measured in the 200–1200 nm spectral range by using an integrating sphere. A modified multiple-scattering-based model successfully explained the spectral distribution of diffuse reflectivity of this highly disordered GaN nanostructure.
©2012 Optical Society of America
Full Article | PDF ArticleYou do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access OSA Member Subscription
You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access OSA Member Subscription
You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access OSA Member Subscription
You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access OSA Member Subscription
Share with Facebook
Tweet This
Post on reddit
Share with LinkedIn
Add to CiteULike
Add to Mendeley
Add to BibSonomy