Abstract

Epitaxial Er-doped LiNbO3 films were pulsed-laser-deposited onto c-cut sapphire. Wavelength dispersion of the refractive index and the extinction coefficient was obtained by fitting the experimental transmittance spectrum to the Swanepoel formula and microscopic theory, which accounts for two resonance transitions in the electric dipole approximation. Strong room temperature luminescence was observed under 514.5 nm Ar-laser pumping. Two-lifetime (3.0 and 6.0 ms) luminescent decay is characteristic for the lasing I413/2I415/2 transition in Er:LiNbO3 films.

© 2012 Optical Society of America

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References

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    [CrossRef]

2011

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

S. I. Khartsev and A. M. Grishin, Opt. Lett. 36, 2806 (2011).
[CrossRef]

2010

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

2009

Y. Lu, P. Dekker, and J. M. Dawes, J. Cryst. Growth 311, 1441 (2009).
[CrossRef]

2006

J.-W. Son, S. S. Orlov, B. Phillips, and L. Hesselink, J. Electroceram. 17, 591 (2006).
[CrossRef]

2003

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

2002

J. Gonzalo, J. A. Chaos, A. Suárez-Garcia, and C. N. Afonso, Appl. Phys. Lett. 81, 2532 (2002).
[CrossRef]

1998

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

1996

D. M. Gill, L. McCaughan, and J. C. Wright, Phys. Rev. B 53, 2334 (1996).
[CrossRef]

W. S. Hu, Z. G. Liu, Y-Q. Lu, S. N. Zhu, and D. Feng, Opt. Lett. 21, 946 (1996).
[CrossRef]

1993

1983

R. Swanepoel, J. Phys. E 16, 1214 (1983).
[CrossRef]

Afonso, C. N.

J. Gonzalo, J. A. Chaos, A. Suárez-Garcia, and C. N. Afonso, Appl. Phys. Lett. 81, 2532 (2002).
[CrossRef]

Alonzo, M.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Argiolas, N.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Bakhru, H.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

Bazzan, M.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Cargill, G. S.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

Chaos, J. A.

J. Gonzalo, J. A. Chaos, A. Suárez-Garcia, and C. N. Afonso, Appl. Phys. Lett. 81, 2532 (2002).
[CrossRef]

Cross, L. E.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

Dawes, J. M.

Y. Lu, P. Dekker, and J. M. Dawes, J. Cryst. Growth 311, 1441 (2009).
[CrossRef]

Dekker, P.

Y. Lu, P. Dekker, and J. M. Dawes, J. Cryst. Growth 311, 1441 (2009).
[CrossRef]

Dovidenko, K.

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

Fazio, E.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Feng, D.

Fukushima, T.

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

Gill, D. M.

D. M. Gill, L. McCaughan, and J. C. Wright, Phys. Rev. B 53, 2334 (1996).
[CrossRef]

Gonzalo, J.

J. Gonzalo, J. A. Chaos, A. Suárez-Garcia, and C. N. Afonso, Appl. Phys. Lett. 81, 2532 (2002).
[CrossRef]

Grishin, A. M.

Heidari Bateni, S.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Hesselink, L.

J.-W. Son, S. S. Orlov, B. Phillips, and L. Hesselink, J. Electroceram. 17, 591 (2006).
[CrossRef]

Hu, W. S.

Huang, C. H. J.

Joshkin, V.

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

Khartsev, S. I.

Kiyoyama, K.

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

Koyanagi, M.

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

Kuech, T.

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

Kumar, A.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

Lee, K.-W.

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

Levy, M.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

Liu, R.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

Liu, Z. G.

Lu, Y.

Y. Lu, P. Dekker, and J. M. Dawes, J. Cryst. Growth 311, 1441 (2009).
[CrossRef]

Lu, Y-Q.

McCaughan, L.

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

D. M. Gill, L. McCaughan, and J. C. Wright, Phys. Rev. B 53, 2334 (1996).
[CrossRef]

Noriki, A.

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

Oktyabrsky, S.

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

Orlov, S. S.

J.-W. Son, S. S. Orlov, B. Phillips, and L. Hesselink, J. Electroceram. 17, 591 (2006).
[CrossRef]

Osgood, R. M.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

Petris, A.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Pettazzi, F.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Phillips, B.

J.-W. Son, S. S. Orlov, B. Phillips, and L. Hesselink, J. Electroceram. 17, 591 (2006).
[CrossRef]

Rabson, T. A.

Sada, C.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Saulys, D.

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

Son, J.-W.

J.-W. Son, S. S. Orlov, B. Phillips, and L. Hesselink, J. Electroceram. 17, 591 (2006).
[CrossRef]

Suárez-Garcia, A.

J. Gonzalo, J. A. Chaos, A. Suárez-Garcia, and C. N. Afonso, Appl. Phys. Lett. 81, 2532 (2002).
[CrossRef]

Swanepoel, R.

R. Swanepoel, J. Phys. E 16, 1214 (1983).
[CrossRef]

Tanaka, T.

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

Vlad, V. I.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Wolfersberger, D.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

Wright, J. C.

D. M. Gill, L. McCaughan, and J. C. Wright, Phys. Rev. B 53, 2334 (1996).
[CrossRef]

Zhu, S. N.

Appl. Phys. Lett.

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru, Appl. Phys. Lett. 73, 2293 (1998).
[CrossRef]

J. Gonzalo, J. A. Chaos, A. Suárez-Garcia, and C. N. Afonso, Appl. Phys. Lett. 81, 2532 (2002).
[CrossRef]

IEEE Trans. Electron Devices

K.-W. Lee, A. Noriki, K. Kiyoyama, T. Fukushima, T. Tanaka, and M. Koyanagi, IEEE Trans. Electron Devices 58, 748 (2011).
[CrossRef]

J. Cryst. Growth

V. Joshkin, K. Dovidenko, S. Oktyabrsky, D. Saulys, T. Kuech, and L. McCaughan, J. Cryst. Growth 259, 273 (2003).
[CrossRef]

Y. Lu, P. Dekker, and J. M. Dawes, J. Cryst. Growth 311, 1441 (2009).
[CrossRef]

J. Electroceram.

J.-W. Son, S. S. Orlov, B. Phillips, and L. Hesselink, J. Electroceram. 17, 591 (2006).
[CrossRef]

J. Opt.

A. Petris, S. Heidari Bateni, V. I. Vlad, M. Alonzo, F. Pettazzi, N. Argiolas, M. Bazzan, C. Sada, D. Wolfersberger, and E. Fazio, J. Opt. 12, 015205 (2010).
[CrossRef]

J. Phys. E

R. Swanepoel, J. Phys. E 16, 1214 (1983).
[CrossRef]

Opt. Lett.

Phys. Rev. B

D. M. Gill, L. McCaughan, and J. C. Wright, Phys. Rev. B 53, 2334 (1996).
[CrossRef]

Other

K. K. Wong, ed., Properties of Lithium Niobate, EMIS Datareviews Series, Vol. 28 (Institution of Engineering and Technology, 2002).

M. Bass, C. M. DeCusatis, J. M. Enoch, V. Lakshminarayanan, G. Li, C. MacDonald, V. N. Mahajan, and E. Van Stryland, Handbook of Optics, 3rd ed., Vol. 4 (McGraw-Hill, 2009). Also available at http://refractiveindex.info/?group=CRYSTALS&material=Al2O3 .

JCPDS–International Center for Diffraction Data, Cards No. 74-2239 (LiNbO3) and 71-1125 (Al2O3) (JCPDS–International Center for Diffraction Data, 2001).

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Figures (4)

Fig. 1.
Fig. 1.

X-ray diffraction Θ2Θ scans in Cu Kα radiation for 0.45 μm thick Er:LiNbO3 film pulsed-laser-deposited onto the Al2O3 (001) single crystal (c-cut sapphire). The inset shows an “unlocked-coupled” (Θ+δΘ)2Θ scan, where δΘ=17.49° is the angle between (001) and (1010) sapphire planes. Miller indexing is shown in a rhombohedral lattice system.

Fig. 2.
Fig. 2.

Transmittance in 0.75 μm thick Er:LiNbO3 film. Experimental and modeled spectra are shown, respectively, with blue circles and a solid red curve. The inset presents the wavelength dispersion of the refractive index and the extinction coefficient in Er:LiNbO3 film calculated with Eq. (1), which accounts for two dipole transitions at λo=138 and 281 nm.

Fig. 3.
Fig. 3.

Normalized PL spectra in the Er-doped LiNbO3 bulk crystal target (blue circles) and 0.45 μm thick film (red triangles).

Fig. 4.
Fig. 4.

Comparisons of PL S-C band spectra (the main frame) and PL decay rates (inset) in the Er-doped LiNbO3 bulk crystal target (blue circles) and 0.45 μm thick film (red triangles).

Tables (1)

Tables Icon

Table 1. Material Parameters of Er:LiNbO3 and Al2O3a

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

[nik]2=1+ωp2fωo2ω2+Γ2+i2ωΓ.
T¯(λ,t¯)=12πδtdtT(λ,t)e(tt¯)2/2δt2.

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