Abstract

Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S3 chalcogenide glass-ceramics (GCs) containing Ga2S3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000–1500 nm). The formation of Ga2S3 nanocrystals (20nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

© 2012 Optical Society of America

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