Abstract

We report the numerical study of a selective thermal emitter based on a metallic multilayered structure consisting of a graded antireflection top layer, a middle layer with uniform porosity (i.e., volume fraction of voids), and a nonporous substrate layer. Simulation results show that the proposed emitters feature an emission edge in near-IR where the emissivity drops from over 0.9 to below 0.1, for both the TE and TM polarizations. Moreover, these desired emission characteristics persist for a wide range of emission angles with the emission edge nearly nonshifted, making the proposed emitters promising for achieving isotropic thermal emission. The designed emitters are particularly attractive for the thermal-photovoltaic applications by suppressing emission below the photovoltaic material bandgap, which is normally in near-IR.

© 2012 Optical Society of America

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2012 (1)

E. Nefzaoui, J. Drevillon, and K. Joulain, J. Appl. Phys. 111, 084316 (2012).
[CrossRef]

2011 (4)

J. Drevillon, K. Joulain, P. Ben-Abdallah, and E. Nefzaoui, J. Appl. Phys. 109, 034315 (2011).
[CrossRef]

M. Wang, C. G. Hu, M. B. Pu, C. Huang, Z. Y. Zhao, Q. Feng, and X. G. Luo, Opt. Express 19, 20642 (2011).
[CrossRef]

Y. Zhou, T. Feng, Z. Liang, J. Li, and D. Liu, Europhys. Lett. 96, 24005 (2011).
[CrossRef]

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

2010 (3)

2009 (7)

C. M. Wang, Y. C. Chang, M. N. Abbas, M. H. Shih, and D. P. Tsai, Opt. Express 17, 13526 (2009).
[CrossRef]

E. Rephaeli and S. H. Fan, Opt. Express 17, 15145(2009).
[CrossRef]

N. P. Sergeant, O. Pincon, M. Agrawal, and P. Peumans, Opt. Express 17, 22800 (2009).
[CrossRef]

J. T. K. Wan, Opt. Commun. 282, 1671 (2009).
[CrossRef]

L. P. Wang, B. J. Lee, X. J. Wang, and Z. M. Zhang, Int. J. Heat Mass Transfer 52, 3024 (2009).
[CrossRef]

M. Diem, T. Koschny, and C. M. Soukoulis, Phys. Rev. B 79, 033101 (2009).
[CrossRef]

Y. Avitzour, Y. A. Urzhumov, and G. Shvets, Phys. Rev. B 79, 045131 (2009).
[CrossRef]

2008 (4)

I. Celanovic, N. Jovanovic, and J. Kassakian, Appl. Phys. Lett. 92, 193101 (2008).
[CrossRef]

E. Rephaeli and S. Fan, Appl. Phys. Lett. 92, 211107 (2008).
[CrossRef]

N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, Phys. Rev. Lett. 100, 207402 (2008).
[CrossRef]

J. H. Lee, W. Leung, T. G. Kim, K. Constant, and K. M. Ho, Opt. Express 16, 8742 (2008).
[CrossRef]

2006 (3)

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Opt. Express 14, 8785 (2006).
[CrossRef]

A. Battula and S. C. Chen, Phys. Rev. B 74, 245407 (2006).
[CrossRef]

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Phys. Rev. E 74, 016609 (2006).
[CrossRef]

2005 (2)

2004 (1)

H. Sai and H. Yugami, Appl. Phys. Lett. 85, 3399 (2004).
[CrossRef]

2003 (3)

S. Y. Lin, J. Moreno, and J. G. Fleming, Appl. Phys. Lett. 83, 380 (2003).
[CrossRef]

N. P. Harder and P. Wurfel, Semicond. Sci. Technol. 18, S151 (2003).
[CrossRef]

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

2002 (1)

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. P. Mainguy, and Y. Chen, Nature 416, 61 (2002).
[CrossRef]

1983 (1)

Abbas, M. N.

Agrawal, M.

Alexander, R. W.

Arnold, C.

Avitzour, Y.

Y. Avitzour, Y. A. Urzhumov, and G. Shvets, Phys. Rev. B 79, 045131 (2009).
[CrossRef]

Bardou, N.

Battula, A.

A. Battula and S. C. Chen, Phys. Rev. B 74, 245407 (2006).
[CrossRef]

Bell, R. J.

Bell, R. R.

Bell, S. E.

Ben-Abdallah, P.

J. Drevillon, K. Joulain, P. Ben-Abdallah, and E. Nefzaoui, J. Appl. Phys. 109, 034315 (2011).
[CrossRef]

Carminati, R.

M. Laroche, C. Arnold, F. Marquier, R. Carminati, J. J. Greffet, S. Collin, N. Bardou, and J. L. Pelouard, Opt. Lett. 30, 2623 (2005).
[CrossRef]

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. P. Mainguy, and Y. Chen, Nature 416, 61 (2002).
[CrossRef]

Celanovic, I.

I. Celanovic, N. Jovanovic, and J. Kassakian, Appl. Phys. Lett. 92, 193101 (2008).
[CrossRef]

I. Celanovic, D. Perreault, and J. Kassakian, Phys. Rev. B 72, 075127 (2005).
[CrossRef]

Chan, D. L. C.

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Phys. Rev. E 74, 016609 (2006).
[CrossRef]

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Opt. Express 14, 8785 (2006).
[CrossRef]

Chang, Y. C.

Chen, S. C.

A. Battula and S. C. Chen, Phys. Rev. B 74, 245407 (2006).
[CrossRef]

Chen, S. Q.

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

Chen, Y.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. P. Mainguy, and Y. Chen, Nature 416, 61 (2002).
[CrossRef]

Cheng, H.

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

Collin, S.

Constant, K.

Diem, M.

M. Diem, T. Koschny, and C. M. Soukoulis, Phys. Rev. B 79, 033101 (2009).
[CrossRef]

Diso, D.

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

Drevillon, J.

E. Nefzaoui, J. Drevillon, and K. Joulain, J. Appl. Phys. 111, 084316 (2012).
[CrossRef]

J. Drevillon, K. Joulain, P. Ben-Abdallah, and E. Nefzaoui, J. Appl. Phys. 109, 034315 (2011).
[CrossRef]

Duan, X. Y.

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

Fan, S.

E. Rephaeli and S. Fan, Appl. Phys. Lett. 92, 211107 (2008).
[CrossRef]

Fan, S. H.

Feng, Q.

Feng, T.

Y. Zhou, T. Feng, Z. Liang, J. Li, and D. Liu, Europhys. Lett. 96, 24005 (2011).
[CrossRef]

Fleming, J. G.

S. Y. Lin, J. Moreno, and J. G. Fleming, Appl. Phys. Lett. 83, 380 (2003).
[CrossRef]

Giessen, H.

N. Liu, M. Mesch, T. Weiss, M. Hentschel, and H. Giessen, Nano Lett. 10, 2342 (2010).
[CrossRef]

Greffet, J. J.

M. Laroche, C. Arnold, F. Marquier, R. Carminati, J. J. Greffet, S. Collin, N. Bardou, and J. L. Pelouard, Opt. Lett. 30, 2623 (2005).
[CrossRef]

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. P. Mainguy, and Y. Chen, Nature 416, 61 (2002).
[CrossRef]

Gu, C. Z.

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

Han, S. E.

Harder, N. P.

N. P. Harder and P. Wurfel, Semicond. Sci. Technol. 18, S151 (2003).
[CrossRef]

He, S. L.

Hentschel, M.

N. Liu, M. Mesch, T. Weiss, M. Hentschel, and H. Giessen, Nano Lett. 10, 2342 (2010).
[CrossRef]

Ho, K. M.

Howell, J.

R. Siegel and J. Howell, Thermal Radiation Heat Transfer (Hemisphere Publishing, 1981).

Hu, C. G.

Huang, C.

Jin, Y.

Joannopoulos, J. D.

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Opt. Express 14, 8785 (2006).
[CrossRef]

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Phys. Rev. E 74, 016609 (2006).
[CrossRef]

Joulain, K.

E. Nefzaoui, J. Drevillon, and K. Joulain, J. Appl. Phys. 111, 084316 (2012).
[CrossRef]

J. Drevillon, K. Joulain, P. Ben-Abdallah, and E. Nefzaoui, J. Appl. Phys. 109, 034315 (2011).
[CrossRef]

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. P. Mainguy, and Y. Chen, Nature 416, 61 (2002).
[CrossRef]

Jovanovic, N.

I. Celanovic, N. Jovanovic, and J. Kassakian, Appl. Phys. Lett. 92, 193101 (2008).
[CrossRef]

Kasagi, N.

D. Kirikae, M. Kobe, Y. Suzuki, and N. Kasagi, in Proceedings of PowerMEMS2008+microEM2008 (2008).

Kassakian, J.

I. Celanovic, N. Jovanovic, and J. Kassakian, Appl. Phys. Lett. 92, 193101 (2008).
[CrossRef]

I. Celanovic, D. Perreault, and J. Kassakian, Phys. Rev. B 72, 075127 (2005).
[CrossRef]

Kim, T. G.

Kirikae, D.

D. Kirikae, M. Kobe, Y. Suzuki, and N. Kasagi, in Proceedings of PowerMEMS2008+microEM2008 (2008).

Kobe, M.

D. Kirikae, M. Kobe, Y. Suzuki, and N. Kasagi, in Proceedings of PowerMEMS2008+microEM2008 (2008).

Koschny, T.

M. Diem, T. Koschny, and C. M. Soukoulis, Phys. Rev. B 79, 033101 (2009).
[CrossRef]

Landy, N. I.

N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, Phys. Rev. Lett. 100, 207402 (2008).
[CrossRef]

Laroche, M.

Lee, B. J.

L. P. Wang, B. J. Lee, X. J. Wang, and Z. M. Zhang, Int. J. Heat Mass Transfer 52, 3024 (2009).
[CrossRef]

Lee, J. H.

Leung, W.

Li, J.

Y. Zhou, T. Feng, Z. Liang, J. Li, and D. Liu, Europhys. Lett. 96, 24005 (2011).
[CrossRef]

Li, J. J.

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

Liang, Z.

Y. Zhou, T. Feng, Z. Liang, J. Li, and D. Liu, Europhys. Lett. 96, 24005 (2011).
[CrossRef]

Licciulli, A.

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

Lin, S. Y.

S. Y. Lin, J. Moreno, and J. G. Fleming, Appl. Phys. Lett. 83, 380 (2003).
[CrossRef]

Liu, D.

Y. Zhou, T. Feng, Z. Liang, J. Li, and D. Liu, Europhys. Lett. 96, 24005 (2011).
[CrossRef]

Liu, N.

N. Liu, M. Mesch, T. Weiss, M. Hentschel, and H. Giessen, Nano Lett. 10, 2342 (2010).
[CrossRef]

Lomascolo, M.

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

Long, L. L.

Luo, X. G.

Maffezzoli, A.

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

Mainguy, S. P.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. P. Mainguy, and Y. Chen, Nature 416, 61 (2002).
[CrossRef]

Marquier, F.

Mazzer, M.

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

Mesch, M.

N. Liu, M. Mesch, T. Weiss, M. Hentschel, and H. Giessen, Nano Lett. 10, 2342 (2010).
[CrossRef]

Mock, J. J.

N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, Phys. Rev. Lett. 100, 207402 (2008).
[CrossRef]

Moreno, J.

S. Y. Lin, J. Moreno, and J. G. Fleming, Appl. Phys. Lett. 83, 380 (2003).
[CrossRef]

Mulet, J. P.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. P. Mainguy, and Y. Chen, Nature 416, 61 (2002).
[CrossRef]

Nefzaoui, E.

E. Nefzaoui, J. Drevillon, and K. Joulain, J. Appl. Phys. 111, 084316 (2012).
[CrossRef]

J. Drevillon, K. Joulain, P. Ben-Abdallah, and E. Nefzaoui, J. Appl. Phys. 109, 034315 (2011).
[CrossRef]

Norris, D. J.

Ordal, M. A.

Padilla, W. J.

N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, Phys. Rev. Lett. 100, 207402 (2008).
[CrossRef]

Pelouard, J. L.

Perreault, D.

I. Celanovic, D. Perreault, and J. Kassakian, Phys. Rev. B 72, 075127 (2005).
[CrossRef]

Peumans, P.

Pincon, O.

Pu, M. B.

Rephaeli, E.

E. Rephaeli and S. H. Fan, Opt. Express 17, 15145(2009).
[CrossRef]

E. Rephaeli and S. Fan, Appl. Phys. Lett. 92, 211107 (2008).
[CrossRef]

Sai, H.

H. Sai and H. Yugami, Appl. Phys. Lett. 85, 3399 (2004).
[CrossRef]

Sajuyigbe, S.

N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, Phys. Rev. Lett. 100, 207402 (2008).
[CrossRef]

Sergeant, N. P.

Shih, M. H.

Shvets, G.

Y. Avitzour, Y. A. Urzhumov, and G. Shvets, Phys. Rev. B 79, 045131 (2009).
[CrossRef]

Siegel, R.

R. Siegel and J. Howell, Thermal Radiation Heat Transfer (Hemisphere Publishing, 1981).

Smith, D. R.

N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, Phys. Rev. Lett. 100, 207402 (2008).
[CrossRef]

Soljacic, M.

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Phys. Rev. E 74, 016609 (2006).
[CrossRef]

D. L. C. Chan, M. Soljacic, and J. D. Joannopoulos, Opt. Express 14, 8785 (2006).
[CrossRef]

Soukoulis, C. M.

M. Diem, T. Koschny, and C. M. Soukoulis, Phys. Rev. B 79, 033101 (2009).
[CrossRef]

Suzuki, Y.

D. Kirikae, M. Kobe, Y. Suzuki, and N. Kasagi, in Proceedings of PowerMEMS2008+microEM2008 (2008).

Tian, J. G.

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

Torsello, G.

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

Tsai, D. P.

Tundo, S.

A. Licciulli, D. Diso, G. Torsello, S. Tundo, A. Maffezzoli, M. Lomascolo, and M. Mazzer, Semicond. Sci. Technol. 18, S174 (2003).
[CrossRef]

Urzhumov, Y. A.

Y. Avitzour, Y. A. Urzhumov, and G. Shvets, Phys. Rev. B 79, 045131 (2009).
[CrossRef]

Wan, J. T. K.

J. T. K. Wan, Opt. Commun. 282, 1671 (2009).
[CrossRef]

Wang, C. M.

Wang, L. P.

L. P. Wang, B. J. Lee, X. J. Wang, and Z. M. Zhang, Int. J. Heat Mass Transfer 52, 3024 (2009).
[CrossRef]

Wang, M.

Wang, X. J.

L. P. Wang, B. J. Lee, X. J. Wang, and Z. M. Zhang, Int. J. Heat Mass Transfer 52, 3024 (2009).
[CrossRef]

Ward, C. A.

Weiss, T.

N. Liu, M. Mesch, T. Weiss, M. Hentschel, and H. Giessen, Nano Lett. 10, 2342 (2010).
[CrossRef]

Wurfel, P.

N. P. Harder and P. Wurfel, Semicond. Sci. Technol. 18, S151 (2003).
[CrossRef]

Yang, H. F.

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

Ye, Y. Q.

Yugami, H.

H. Sai and H. Yugami, Appl. Phys. Lett. 85, 3399 (2004).
[CrossRef]

Zhang, Z. M.

L. P. Wang, B. J. Lee, X. J. Wang, and Z. M. Zhang, Int. J. Heat Mass Transfer 52, 3024 (2009).
[CrossRef]

Zhao, Z. Y.

Zhou, Y.

Y. Zhou, T. Feng, Z. Liang, J. Li, and D. Liu, Europhys. Lett. 96, 24005 (2011).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. Lett. (5)

H. Sai and H. Yugami, Appl. Phys. Lett. 85, 3399 (2004).
[CrossRef]

S. Y. Lin, J. Moreno, and J. G. Fleming, Appl. Phys. Lett. 83, 380 (2003).
[CrossRef]

I. Celanovic, N. Jovanovic, and J. Kassakian, Appl. Phys. Lett. 92, 193101 (2008).
[CrossRef]

S. Q. Chen, H. Cheng, H. F. Yang, J. J. Li, X. Y. Duan, C. Z. Gu, and J. G. Tian, Appl. Phys. Lett. 99, 253104 (2011).
[CrossRef]

E. Rephaeli and S. Fan, Appl. Phys. Lett. 92, 211107 (2008).
[CrossRef]

Europhys. Lett. (1)

Y. Zhou, T. Feng, Z. Liang, J. Li, and D. Liu, Europhys. Lett. 96, 24005 (2011).
[CrossRef]

Int. J. Heat Mass Transfer (1)

L. P. Wang, B. J. Lee, X. J. Wang, and Z. M. Zhang, Int. J. Heat Mass Transfer 52, 3024 (2009).
[CrossRef]

J. Appl. Phys. (2)

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Figures (5)

Fig. 1.
Fig. 1.

Structural models of the proposed thermal emitters used in the SMM (a) and the FDTD method (b). Calculated normal emissivity spectra of the typical thermal emitter using both methods are shown in (c).

Fig. 2.
Fig. 2.

Calculated normal emissivity spectra of the different combinations of the three layers in the typical thermal emitter design proposed in this study: the top layer (TL), the middle layer (ML), and the substrate layer (SL).

Fig. 3.
Fig. 3.

Calculated normal emissivity spectra of a multilayered W-based emitter: (a) with pML changing from 20% to 80% and (b) with equally thick TL and ML (layer thickness shown in the legend).

Fig. 4.
Fig. 4.

Calculated normal emissivity spectra of a multilayered W-based emitter with pmax changing from 100% to 70%.

Fig. 5.
Fig. 5.

Calculated emissivity of the typical thermal emitter proposed in this study for TE and TM polarizations: (a) emissivity as a function of the emission angle and wavelength and (b) emissivity spectra with emission angles ranging from 0° to 60°.

Equations (2)

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pi=zi1zi(pML1dTLz+1)dzdTL/m,(i=1,2,,m),
εeffεairεeff+2εair=(1pi)εmetalεairεmetal+2εair.

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