Abstract

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22  mA/W for a 3 mm long Mach–Zehnder modulator of 2×1018  cm−3 doping concentration at −7.1  V bias voltage and 5.9  mA/W for a ring modulator of 1×1018  cm−3 doping concentration at −10  V bias voltage. The former is used to demonstrate data detection of up to 35  Gbits/s.

© 2012 Optical Society of America

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