Abstract

We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17A/W at 1550 nm wavelength upon 1V bias voltage, with a 20μm×20μm InGaAs photodetector area. This device exhibits a 3 dB bandwidth of 9 GHz upon 4V bias voltage. We demonstrate an open-eye diagram at 10Gb/s data rate upon 4V bias voltage.

© 2012 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, Opt. Express 19, 24897 (2011).
    [CrossRef]
  2. L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, Opt. Express 20, 1096 (2012).
    [CrossRef]
  3. R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, Opt. Express 20, 11316 (2012).
    [CrossRef]
  4. H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, Opt. Express 15, 6044 (2007).
    [CrossRef]
  5. P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
    [CrossRef]
  6. R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
    [CrossRef]
  7. Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
    [CrossRef]
  8. J. Bowers and C. Burrus, J. Lightwave Technol. 5, 1339 (1987).
    [CrossRef]
  9. G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
    [CrossRef]

2012 (3)

2011 (2)

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, Opt. Express 19, 24897 (2011).
[CrossRef]

2010 (1)

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

2007 (1)

2002 (1)

G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
[CrossRef]

1987 (1)

J. Bowers and C. Burrus, J. Lightwave Technol. 5, 1339 (1987).
[CrossRef]

Bessette, J. T.

Binetti, P. R. A.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Bowers, J.

J. Bowers and C. Burrus, J. Lightwave Technol. 5, 1339 (1987).
[CrossRef]

Bowers, J. E.

Burrus, C.

J. Bowers and C. Burrus, J. Lightwave Technol. 5, 1339 (1987).
[CrossRef]

Cai, Y.

Camacho-Aguilera, R. E.

Cassan, E.

Chang-Hasnain, C.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Chen, R.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Chuang, L. C.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Cohen, O.

Crozat, P.

Davids, P. S.

de Vries, T.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

DeRose, C. T.

Di Cioccio, L.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Fang, A. W.

Fedeli, J. M.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Fédéli, J. M.

Feng, S.

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

Fisher, M.

Gao, Y.

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

Geng, Y.

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

Hanawa, I.

G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
[CrossRef]

Hartmann, J. M.

Jones, R.

Kimerling, L. C.

Ko, W. S.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Kobayashi, M.

G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
[CrossRef]

Kopp, C.

Lagahe, C.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Lau, K. M.

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

Leijtens, X. J. M.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Liang, H.

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

Marris-Morini, D.

Michel, J.

Ng, K. W.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Notzel, R.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Oei, Y. S.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Osmond, J.

Paniccia, M. J.

Park, H.

Patel, N.

Polzer, A.

Poon, A. W.

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

Raday, O.

Romagnoli, M.

Sato, K.

G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
[CrossRef]

Sedgwick, F. G.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Smit, M. K.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Starbuck, A. L.

Sysak, M. N.

Tokumitsu, T.

G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
[CrossRef]

Tran, T.-T. D.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Trotter, D. C.

Van Campenhout, J.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Van Thourhout, D.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

van Veldhoven, P. J.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

Vivien, L.

Wang, G.

G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
[CrossRef]

Watts, M. R.

Zhong, Z.

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

Zimmermann, H.

Zortman, W. A.

IEEE Microwave Compon. Lett. (1)

G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002).
[CrossRef]

IEEE Photon. J. (1)

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012).
[CrossRef]

J. Lightwave Technol. (1)

J. Bowers and C. Burrus, J. Lightwave Technol. 5, 1339 (1987).
[CrossRef]

Nat. Photonics (1)

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011).
[CrossRef]

Opt. Express (4)

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1.
Fig. 1.

(a) Schematic of the epitaxial III-V-on-Si waveguide butt-coupled photodetector. Inset: the layered structure with the dopant concentrations and the layer thicknesses of the vertical p-i-n diode on buffer layers. (b) Top-view optical micrograph of the fabricated photodetector. The white dashed-line box indicates the 20μm×20μm InGaAs photodetector area. The bold white vertical line indicates the waveguide underneath the metal pad.

Fig. 2.
Fig. 2.

(a) Measured dark current and total current upon the estimated optical power of 240 μW at 1550 nm at the butt-coupled waveguide end as a function of bias voltages. (b) Measured photocurrent as a function of the estimated coupled input power upon various bias voltages. Inset: zoom-in view of the curves under low coupled input power.

Fig. 3.
Fig. 3.

(a) Top-view and (b) cross-sectional view scanning electron microscope pictures of the as-grown sample. (c) Calculated power-coupling efficiency between the silicon waveguide and the InGaAs absorption layer as a function of the gap separation. Inset: Calculated expanded optical intensity pattern at a distance of 2 μm away from the silicon waveguide end. The two white lines depict the InGaAs absorption layer.

Fig. 4.
Fig. 4.

(a) Measured frequency responses upon a reverse-bias voltage ranging from 0 to 5 V and (b) measured eye diagram at 10Gb/s data rate upon 4V bias voltage.

Tables (1)

Tables Icon

Table 1. Comparison Among Photodetectors on Si Substrates by Various Technology Platformsa

Metrics