Abstract

We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17A/W at 1550 nm wavelength upon 1V bias voltage, with a 20μm×20μm InGaAs photodetector area. This device exhibits a 3 dB bandwidth of 9 GHz upon 4V bias voltage. We demonstrate an open-eye diagram at 10Gb/s data rate upon 4V bias voltage.

© 2012 Optical Society of America

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