Abstract

An ultrasmall (<10μm length) polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <1.2dB at a wavelength of 1.53 μm. Furthermore, our design is found to be broadband and tolerant to dimension variations.

© 2012 Optical Society of America

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References

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2012 (1)

2011 (1)

2008 (2)

2003 (1)

Alonso Ramos, C.

Ambrosius, H.

J. Pello, J. van der Tol, G. Roelkens, H. Ambrosius, and M. Smit, “Design of a new ultra-small polarization converter in InGaAsP/InP membrane,” presented at the 15th European Conference on Integrated Optics, Cambridge, UK, April 2010, paper WeB2.

Bogaerts, W.

D. Vermeulen, S. Selvaraja, W. Bogaerts, and G. Roelkens, “High-efficiency broadband CMOS-compatible polarization rotator on SOI,” presented at the 7th International Conference on Group IV Photonics, Beijing, China, September 2010, paper WC6.

Calvo, M.

Cheben, P.

Cho, P.

Ding, Y.

Fukuda, H.

Hvam, J.

Itabashi, S.

Janz, S.

Khurgin, J.

Lapointe, J.

Liu, L.

Molina Fernandez, Í.

Nakano, H.

Ortega-Moñux, A.

Pello, J.

J. Pello, J. van der Tol, G. Roelkens, H. Ambrosius, and M. Smit, “Design of a new ultra-small polarization converter in InGaAsP/InP membrane,” presented at the 15th European Conference on Integrated Optics, Cambridge, UK, April 2010, paper WeB2.

Roelkens, G.

D. Vermeulen, S. Selvaraja, W. Bogaerts, and G. Roelkens, “High-efficiency broadband CMOS-compatible polarization rotator on SOI,” presented at the 7th International Conference on Group IV Photonics, Beijing, China, September 2010, paper WC6.

J. Pello, J. van der Tol, G. Roelkens, H. Ambrosius, and M. Smit, “Design of a new ultra-small polarization converter in InGaAsP/InP membrane,” presented at the 15th European Conference on Integrated Optics, Cambridge, UK, April 2010, paper WeB2.

Schmid, J.

Selvaraja, S.

D. Vermeulen, S. Selvaraja, W. Bogaerts, and G. Roelkens, “High-efficiency broadband CMOS-compatible polarization rotator on SOI,” presented at the 7th International Conference on Group IV Photonics, Beijing, China, September 2010, paper WC6.

Shinojima, H.

Smit, M.

J. Pello, J. van der Tol, G. Roelkens, H. Ambrosius, and M. Smit, “Design of a new ultra-small polarization converter in InGaAsP/InP membrane,” presented at the 15th European Conference on Integrated Optics, Cambridge, UK, April 2010, paper WeB2.

Tsuchizawa, T.

Vachon, M.

van der Tol, J.

J. Pello, J. van der Tol, G. Roelkens, H. Ambrosius, and M. Smit, “Design of a new ultra-small polarization converter in InGaAsP/InP membrane,” presented at the 15th European Conference on Integrated Optics, Cambridge, UK, April 2010, paper WeB2.

Velasco, A.

Vermeulen, D.

D. Vermeulen, S. Selvaraja, W. Bogaerts, and G. Roelkens, “High-efficiency broadband CMOS-compatible polarization rotator on SOI,” presented at the 7th International Conference on Group IV Photonics, Beijing, China, September 2010, paper WC6.

Watanabe, T.

Xu, D.

Yamada, K.

Yamanoue, M.

Yamauchi, J.

Yvind, K.

J. Lightwave Technol. (1)

J. Opt. Netw. (1)

Opt. Express (1)

Opt. Lett. (2)

Other (2)

D. Vermeulen, S. Selvaraja, W. Bogaerts, and G. Roelkens, “High-efficiency broadband CMOS-compatible polarization rotator on SOI,” presented at the 7th International Conference on Group IV Photonics, Beijing, China, September 2010, paper WC6.

J. Pello, J. van der Tol, G. Roelkens, H. Ambrosius, and M. Smit, “Design of a new ultra-small polarization converter in InGaAsP/InP membrane,” presented at the 15th European Conference on Integrated Optics, Cambridge, UK, April 2010, paper WeB2.

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Figures (4)

Fig. 1.
Fig. 1.

Diagram of the polarization converter, and (Inset) depiction of the triangular waveguide eigenmodes.

Fig. 2.
Fig. 2.

(a) Process-flow used to fabricate the polarization converter; (b) SEM picture of a fabricated device, corresponding to step v. of the process-flow in (a).

Fig. 3.
Fig. 3.

(a) Schematic of the setup used to characterize the devices; (b) Measured TE-TE transmission of the device of Fig. 1 at λ=1.53μm, as a function of the length Lrec of the central rectangular section. The three graphs correspond to three sets of devices (with Ltri=2.1, 2.35, and 2.6 μm).

Fig. 4.
Fig. 4.

PCE and insertion losses (inset) as a function of wavelength for the device Ltri=2.6μm and Lrec=2.6±0.05μm.

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