Passively $Q$-switched microchip Er, $\mathrm{Yb}\text{:}{\mathrm{YAl}}_3{({\mathrm{BO}}_3)}_4$ diode-pumped laser

Abstract

We report, for the first time to our knowledge, a diode-pumped cw and passively $Q$-switched microchip Er, $\mathrm{Yb}\text{:}{\mathrm{YAl}}_3{({\mathrm{BO}}_3)}_4$ laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using ${\mathrm{Co}}^{2+}\text{:}\mathrm{Mg}{\mathrm{Al}}_2{\mathrm{O}}_4$ as a saturable absorber, a ${\mathrm{TEM}}_{00}$-mode $Q$-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.

©2012 Optical Society of America

Single-longitudinal-mode 1521 nm passively q-switched Er:Yb:YAl₃(BO₃)₄ pulse microchip laser

Yujin Chen, Yanfu Lin, Jianhua Huang, Xinghong Gong, Zundu Luo, and Yidong Huang
Opt. Express 27(18) 26080-26086 (2019)

Acousto-optic Q-switched self-frequency-doubling Er:  Yb:  YAl₃(BO₃)₄ laser at 800 nm

Yujin Chen, Yanfu Lin, Xinghong Gong, Jianhua Huang, Zundu Luo, and Yidong Huang
Opt. Lett. 37(9) 1565-1567 (2012)

Eye-safe 1.55 µm Er:Yb:YAl₃(BO₃)₄ microchip laser

Yujin Chen, Yanfu Lin, Zhongmin Yang, Jianhua Huang, Xinghong Gong, Zundu Luo, and Yidong Huang
OSA Continuum 2(1) 142-150 (2019)

Eye-safe 1.55  μm passively Q-switched Er,Yb:GdAl₃(BO₃)₄ diode-pumped laser

K. N. Gorbachenya, V. E. Kisel, A. S. Yasukevich, V. V. Maltsev, N. I. Leonyuk, and N. V. Kuleshov
Opt. Lett. 41(5) 918-921 (2016)

Efficient 1 W continuous-wave diode-pumped Er,Yb:YAl₃(BO₃)₄ laser

Nikolai A. Tolstik, Sergey V. Kurilchik, Victor E. Kisel, Nikolay V. Kuleshov, Victor V. Maltsev, Oleg V. Pilipenko, Elizaveta V. Koporulina, and Nikolai I. Leonyuk
Opt. Lett. 32(22) 3233-3235 (2007)