Passively $Q$-switched microchip Er, $\mathrm{Yb}\text{:}{\mathrm{YAl}}_3{({\mathrm{BO}}_3)}_4$ diode-pumped laser

Abstract

We report, for the first time to our knowledge, a diode-pumped cw and passively $Q$-switched microchip Er, $\mathrm{Yb}\text{:}{\mathrm{YAl}}_3{({\mathrm{BO}}_3)}_4$ laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using ${\mathrm{Co}}^{2+}\text{:}\mathrm{Mg}{\mathrm{Al}}_2{\mathrm{O}}_4$ as a saturable absorber, a ${\mathrm{TEM}}_{00}$-mode $Q$-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.

©2012 Optical Society of America

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