Abstract

The transmittive and reflective $Z$-scan technique is used with a 10 Hz, frequency doubled, $Q$-switched, and mode-locked Nd:YAG laser to verify that the reflectivity of the super-resolution near-field structure of an SiN/Sb/SiN thin film increases as incident intensity decreases. This intensity-dependent reflection, called nonlinear reflection, reflects a ${\mathrm{TEM}}_{00}$ mode laser beam more strongly at its periphery than at its center and so shrinks the transmitted laser beam. The observed nonlinear reflection is attributed to laser-induced change of carrier densities in Sb, to justify quantitatively the experimental results.

©2012 Optical Society of America

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